1. Casa
  2. Prodotti
  3. Dispositivi a semiconduttore discreti
  4. Diodi - Raddrizzatori - Singoli
  5. Prodotti

Produttori per Diodi - Raddrizzatori - Singoli

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Numero di parte Produttore / Marca Breve descrizione Stato parteTipo diodoTensione - DC Reverse (Vr) (Max)Corrente - Rettificato medio (Io)Voltage - Forward (Vf) (Max) @ IfVelocitàTempo di recupero inverso (trr)Corrente - Perdita inversa @ VrCapacità @ Vr, FTipo di montaggioPacchetto / casoPacchetto dispositivo fornitoreTemperatura operativa - Giunzione
HU20260R
 Microsemi Corporation DIODE GEN PURP 600V 200A HALFPAK ObsoleteStandard, Reverse Polarity600V200A1.35V @ 200AFast Recovery =< 500ns, > 200mA (Io)130ns50µA @ 600V
-
Chassis MountHALF-PAKHALF-PAK
-
SDM30004R
 Microsemi Corporation DIODE GEN PURP 400V 300A DIE ObsoleteStandard, Reverse Polarity400V300A1.1V @ 300AStandard Recovery >500ns, > 200mA (Io)
-
75µA @ 400V
-
Chassis MountDieDie
-
HS243100R
 Microsemi Corporation DIODE SCHOTTKY 100V 240A HALFPAK ObsoleteSchottky, Reverse Polarity100V240A860mV @ 240AFast Recovery =< 500ns, > 200mA (Io)
-
8mA @ 100V6400pF @ 5V, 1MHzChassis MountHALF-PAKHALF-PAK
-
MMBD4148-D87Z
 ON Semiconductor DIODE GEN PURP 100V 200MA SOT23 ObsoleteStandard100V200mA1V @ 10mASmall Signal =< 200mA (Io), Any Speed4ns5µA @ 75V4pF @ 0V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3150°C (Max)
JANTX1N3890R
 Microsemi Corporation DIODE GEN PURP 100V 12A DO203AA ActiveStandard100V12A1.5V @ 20AFast Recovery =< 500ns, > 200mA (Io)200ns10µA @ 100V115pF @ 10V, 1MHzStud MountDO-203AA, DO-4, StudDO-203AA-65°C ~ 175°C
JAN1N5618US
 Microsemi Corporation DIODE GEN PURP 600V 1A D5A Discontinued at -Standard600V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 600V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 200°C
JAN1N5621US
 Microsemi Corporation DIODE GEN PURP 800V 1A D5A Discontinued at -Standard800V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns500nA @ 800V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 175°C
JAN1N5804US
 Microsemi Corporation DIODE GEN PURP 100V 2.5A D5A Discontinued at -Standard100V2.5A975mV @ 2.5AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 100V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JAN1N5807
 Microsemi Corporation DIODE GEN PURP 50V 6A AXIAL Discontinued at -Standard50V6A875mV @ 4AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 50V60pF @ 10V, 1MHzThrough HoleB, Axial
-
-65°C ~ 175°C
JAN1N6620
 Microsemi Corporation DIODE GEN PURP 220V 2A AXIAL ActiveStandard220V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 220V10pF @ 10V, 1MHzThrough HoleA, Axial
-
-65°C ~ 150°C
JAN1N6620US
 Microsemi Corporation DIODE GEN PURP 220V 2A D5A ActiveStandard220V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 220V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
JAN1N6621
 Microsemi Corporation DIODE GEN PURP 440V 2A AXIAL ActiveStandard440V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 440V10pF @ 10V, 1MHzThrough HoleA, Axial
-
-65°C ~ 150°C
JAN1N6622
 Microsemi Corporation DIODE GEN PURP 660V 2A AXIAL Discontinued at -Standard660V2A1.6V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V10pF @ 10V, 1MHzThrough HoleA, Axial
-
-65°C ~ 150°C
JAN1N6626
 Microsemi Corporation DIODE GEN PURP 220V 1.75A AXIAL ActiveStandard220V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 220V40pF @ 10V, 1MHzThrough HoleE, Axial
-
-65°C ~ 150°C
JAN1N6626US
 Microsemi Corporation DIODE GEN PURP 220V 1.75A D5B ActiveStandard220V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 220V40pF @ 10V, 1MHzSurface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6627
 Microsemi Corporation DIODE GEN PURP 440V 1.75A AXIAL ActiveStandard440V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 440V40pF @ 10V, 1MHzThrough HoleE, Axial
-
-65°C ~ 150°C
JAN1N6627US
 Microsemi Corporation DIODE GEN PURP 440V 1.75A D5B Discontinued at -Standard440V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 440V40pF @ 10V, 1MHzSurface MountSQ-MELF, ED-5B-65°C ~ 150°C
JAN1N6628
 Microsemi Corporation DIODE GEN PURP 660V 1.75A AXIAL ActiveStandard660V1.75A1.35V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 600V
-
Through HoleE, Axial
-
-65°C ~ 175°C
JAN1N6629
 Microsemi Corporation DIODE GEN PURP 880V 1.4A AXIAL ActiveStandard880V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 800V
-
Through HoleE, Axial
-
-65°C ~ 175°C
JAN1N6631
 Microsemi Corporation DIODE GEN PURP 1.1KV 1.4A AXIAL ActiveStandard1100V1.4A1.6V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns2µA @ 1000V
-
Through HoleE, Axial
-
-65°C ~ 175°C
JANTX1N5419US
 Microsemi Corporation DIODE GEN PURP 500V 3A D5B Discontinued at -Standard500V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)250ns1µA @ 500V
-
Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTX1N6624US
 Microsemi Corporation DIODE GEN PURP 990V 1A D5A Discontinued at -Standard990V1A1.55V @ 1AFast Recovery =< 500ns, > 200mA (Io)50ns500nA @ 990V10pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N4248
 Microsemi Corporation DIODE GEN PURP 800V 1A AXIAL Discontinued at -Standard800V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)5µs1µA @ 800V
-
Through HoleA, Axial
-
-65°C ~ 175°C
JANTXV1N5415US
 Microsemi Corporation DIODE GEN PURP 50V 3A D5B Discontinued at -Standard50V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 50V
-
Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N5416
 Microsemi Corporation DIODE GEN PURP 100V 3A AXIAL Discontinued at -Standard100V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 100V
-
Through HoleB, Axial
-
-65°C ~ 175°C
JANTXV1N5419
 Microsemi Corporation DIODE GEN PURP 500V 3A AXIAL Discontinued at -Standard500V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 500V
-
Through HoleB, Axial
-
-65°C ~ 175°C
JANTXV1N5616US
 Microsemi Corporation DIODE GEN PURP 400V 1A D5A Discontinued at -Standard400V1A1.3V @ 3AStandard Recovery >500ns, > 200mA (Io)2µs500nA @ 400V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 200°C
JANTXV1N5621US
 Microsemi Corporation DIODE GEN PURP 800V 1A D5A Discontinued at -Standard800V1A1.6V @ 3AFast Recovery =< 500ns, > 200mA (Io)300ns500nA @ 800V20pF @ 12V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JANTXV1N5802
 Microsemi Corporation DIODE GEN PURP 50V 1A AXIAL Discontinued at -Standard50V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 50V25pF @ 10V, 1MHzThrough HoleA, Axial
-
-65°C ~ 175°C
JANTXV1N5802US
 Microsemi Corporation DIODE GEN PURP 50V 1A D5A Discontinued at -Standard50V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 50V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JANTXV1N5804US
 Microsemi Corporation DIODE GEN PURP 100V 1A D5A Discontinued at -Standard100V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 100V25pF @ 10V, 1MHzSurface MountSQ-MELF, AD-5A-65°C ~ 175°C
JANTXV1N5807US
 Microsemi Corporation DIODE GEN PURP 50V 3A D5B Discontinued at -Standard50V3A875mV @ 4AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 50V60pF @ 10V, 1MHzSurface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N6622US
 Microsemi Corporation DIODE GEN PURP 660V 1.2A D5A Discontinued at -Standard660V1.2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V
-
Surface MountSQ-MELF, AD-5A-65°C ~ 150°C
JANTXV1N6625
 Microsemi Corporation DIODE GEN PURP 1.1KV 1A D5A Discontinued at -Standard1100V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns1µA @ 1100V
-
Through HoleA, AxialA-PAK-65°C ~ 150°C
JANTXV1N6626US
 Microsemi Corporation DIODE GEN PURP 220V 1.75A D5B Discontinued at -Standard220V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 220V40pF @ 10V, 1MHzSurface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6627
 Microsemi Corporation DIODE GEN PURP 440V 1.75A AXIAL Discontinued at -Standard440V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 440V40pF @ 10V, 1MHzThrough HoleE, Axial
-
-65°C ~ 150°C
JANTXV1N6628US
 Microsemi Corporation DIODE GEN PURP 660V 1.75A D5B Discontinued at -Standard660V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 660V40pF @ 10V, 1MHzSurface MountSQ-MELF, ED-5B-65°C ~ 150°C
JANTXV1N6629
 Microsemi Corporation DIODE GEN PURP 880V 1.4A AXIAL Discontinued at -Standard880V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 880V40pF @ 10V, 1MHzThrough HoleE, Axial
-
-65°C ~ 150°C
MSG104
 Microsemi Corporation DIODE SCHOTTKY 40V 1A DO204AL ActiveSchottky40V1A690mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 175°C
MSG105
 Microsemi Corporation DIODE SCHOTTKY 50V 1A DO204AL ActiveSchottky50V1A690mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 175°C
MSG106
 Microsemi Corporation DIODE SCHOTTKY 60V 1A DO204AL ActiveSchottky60V1A690mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 175°C
MSG109
 Microsemi Corporation DIODE SCHOTTKY 90V 1A DO204AL ActiveSchottky90V1A810mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 175°C
MSG110
 Microsemi Corporation DIODE SCHOTTKY 100V 1A DO204AL ActiveSchottky100V1A830mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 175°C
MSG140
 Microsemi Corporation DIODE SCHOTTKY 40V 1A DO204AL ObsoleteSchottky40V1A580mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 40V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 150°C
MSG145
 Microsemi Corporation DIODE SCHOTTKY 45V 1A DO204AL ActiveSchottky45V1A580mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 45V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 150°C
MSG150
 Microsemi Corporation DIODE SCHOTTKY 50V 1A DO204AL ObsoleteSchottky50V1A580mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 50V
-
Through HoleDO-204AL, DO-41, AxialDO-204AL (DO-41)-65°C ~ 150°C
DB3Y313KEL
 Panasonic Electronic Components DIODE SCHOTTKY 30V 200MA SOT23-3 ObsoleteSchottky30V200mA550mV @ 200mASmall Signal =< 200mA (Io), Any Speed1.5ns50µA @ 30V3.8pF @ 10V, 1MHzSurface MountTO-236-3, SC-59, SOT-23-3SOT-23-3125°C (Max)
DB2U31600L
 Panasonic Electronic Components DIODE SCHOTTKY 30V 100MA SOD923 ObsoleteSchottky30V100mA550mV @ 100mASmall Signal =< 200mA (Io), Any Speed800ps15µA @ 30V2pF @ 10V, 1MHzSurface MountSOD-923SOD-923125°C (Max)
1N4449
 Microsemi Corporation DIODE GEN PURP 75V 200MA DO35 Discontinued at -Standard75V200mA1V @ 30mASmall Signal =< 200mA (Io), Any Speed4ns25nA @ 20V
-
Through HoleDO-204AH, DO-35, AxialDO-35-65°C ~ 150°C
1N4534
 Microsemi Corporation DIODE GEN PURP 50V 150MA DO34 ActiveStandard50V150mA880mV @ 20mASmall Signal =< 200mA (Io), Any Speed4ns50nA @ 50V
-
Through HoleDO-204AG, DO-34, AxialDO-34-65°C ~ 175°C
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  3. 594
  4. 595
  5. 596
  6. 597
  7. 598
  8. 599
  9. 600
  10. 601
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