Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - MA2ZD020GL MA3S7810GL MA3ZD120GL BYC15X-600,127 - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
MA2ZD020GL	Panasonic Electronic Components	DIODE SCHOTTKY 20V 500MA SMINI2	Obsolete	Schottky	20V	500mA	550mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	10µA @ 10V	-	Surface Mount	SC-90, SOD-323F	SMini2-F3	125°C (Max)
MA3S7810GL	Panasonic Electronic Components	DIODE SCHOTTKY 30V 30MA SSMINI3	Obsolete	Schottky	30V	30mA (DC)	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	1ns	300nA @ 30V	-	Surface Mount	SC-89, SOT-490	SSMini3-F3	125°C (Max)
MA3ZD120GL	Panasonic Electronic Components	DIODE SCHOTTKY 20V 700MA SMINI3	Obsolete	Schottky	20V	700mA	450mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	7ns	200µA @ 20V	-	Surface Mount	SC-85	SMini3-F2	125°C (Max)
BYC15X-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 15A TO220F	Active	Standard	500V	15A	2.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	200µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
BYC5X-600,127	WeEn Semiconductors	DIODE GEN PURP 500V 5A TO220F	Active	Standard	500V	5A	2.9V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220FP	150°C (Max)
STTH3R04Q	STMicroelectronics	DIODE GEN PURP 400V 3A DO15	Obsolete	Standard	400V	3A	1.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	175°C (Max)
STTH1R04	STMicroelectronics	DIODE GEN PURP 400V 1A DO41	Obsolete	Standard	400V	1A	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	175°C (Max)
STTH3R04	STMicroelectronics	DIODE GEN PURP 400V 3A DO201AD	Obsolete	Standard	400V	3A	1.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	-	Through Hole	DO-201AD, Axial	DO-201AD	175°C (Max)
FFPF10UP30STTU	ON Semiconductor	DIODE GEN PURP 300V 10A TO220F	Obsolete	Standard	300V	10A	1.4V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	100µA @ 300V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
1N4937	ON Semiconductor	DIODE GEN PURP 600V 1A DO41	Obsolete	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	12pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-50°C ~ 150°C
1N4447TR	ON Semiconductor	DIODE GEN PURP 100V DO35	Obsolete	Standard	100V	-	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
1N462A	ON Semiconductor	DIODE GEN PURP DO35	Obsolete	Standard	-	-	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-
BAY80	ON Semiconductor	DIODE GEN PURP 150V 200MA DO35	Obsolete	Standard	150V	200mA	1V @ 150mA	Small Signal =< 200mA (Io), Any Speed	60ns	100nA @ 120V	6pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
FYP0545STU	ON Semiconductor	DIODE SCHOTTKY 40V 5A TO220F	Obsolete	Schottky	40V	5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-
U1GWJ49(TE12L,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 1A PWMINI	Obsolete	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	TO-243AA	PW-MINI	-40°C ~ 125°C
DSF07S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 700MA USC	Obsolete	Schottky	30V	700mA	450mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 30V	170pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
DSF05S30U(TPH3,F)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC	Obsolete	Schottky	30V	500mA	450mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	SC-76, SOD-323	USC	125°C (Max)
CDBERT0230R	Comchip Technology	DIODE SCHOTTKY 30V 200MA 0503	Obsolete	Schottky	30V	200mA	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	0503 (1308 Metric)	0503 (1308 Metric)	125°C (Max)
VSKD91\08P	Vishay Semiconductor Diodes Division	DIODE GP 800V 100A ADD-A-PAK	Obsolete	Standard	800V	100A	-	Standard Recovery >500ns, > 200mA (Io)	-	10mA @ 800V	-	Chassis Mount	ADD-A-PAK (3 + 4)	ADD-A-PAK®	-
FFPF30UP20STTU	ON Semiconductor	DIODE GEN PURP 200V 30A TO220F	Obsolete	Standard	200V	30A	1.15V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 200V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
BAS 3005A-02V E6327	Infineon Technologies	DIODE SCHOTTKY 30V 500MA SC79-2	Obsolete	Schottky	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	15pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	-55°C ~ 125°C
BAS4002S02LRHE6327XTSA1	Infineon Technologies	DIODE SCHOTTKY 40V 200MA TSLP-2	Obsolete	Schottky	40V	200mA (DC)	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 40V	12pF @ 5V, 1MHz	Surface Mount	SOD-882	PG-TSLP-2	-55°C ~ 150°C
BAS 52-02V E6433	Infineon Technologies	DIODE SCHOTTKY 45V 750MA SC79-2	Obsolete	Schottky	45V	750mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 45V	10pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAT 54-02V E6327	Infineon Technologies	DIODE SCHOTTKY 30V 200MA SC79-2	Obsolete	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	150°C (Max)
BAT 54W E6327	Infineon Technologies	DIODE SCHOTTKY 30V 200MA SOT323	Obsolete	Schottky	30V	200mA (DC)	800mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-70, SOT-323	PG-SOT323-3	150°C (Max)
IDB06S60C	Infineon Technologies	DIODE SCHOTTKY 600V 6A D2PAK	Obsolete	Silicon Carbide Schottky	600V	6A (DC)	1.7V @ 6A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
IDB10S60C	Infineon Technologies	DIODE SILICON 600V 10A D2PAK	Obsolete	Silicon Carbide Schottky	600V	10A (DC)	1.7V @ 10A	No Recovery Time > 500mA (Io)	0ns	140µA @ 600V	480pF @ 1V, 1MHz	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
IDD04SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 5.6A TO252-3	Discontinued at -	Silicon Carbide Schottky	600V	5.6A	2.3V @ 4A	No Recovery Time > 500mA (Io)	0ns	25µA @ 600V	80pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD05SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 5A TO252-3	Discontinued at -	Silicon Carbide Schottky	600V	5A (DC)	2.3V @ 5A	No Recovery Time > 500mA (Io)	0ns	30µA @ 600V	110pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD06SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO252-3	Discontinued at -	Silicon Carbide Schottky	600V	6A (DC)	2.3V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD08SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 8A TO252-3	Discontinued at -	Silicon Carbide Schottky	600V	8A (DC)	2.1V @ 8A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD09SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 9A TO252-3	Discontinued at -	Silicon Carbide Schottky	600V	9A (DC)	2.1V @ 9A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD10SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 10A TO252-3	Discontinued at -	Silicon Carbide Schottky	600V	10A (DC)	2.1V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 600V	290pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDD12SG60CXTMA1	Infineon Technologies	DIODE SCHOTTKY 600V 12A TO252-3	Obsolete	Silicon Carbide Schottky	600V	12A (DC)	2.1V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3	-55°C ~ 175°C
IDH02SG120XKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 2A TO220-2	Obsolete	Silicon Carbide Schottky	1200V	2A (DC)	1.8V @ 2A	No Recovery Time > 500mA (Io)	0ns	48µA @ 1200V	125pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH03SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 3A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	3A (DC)	2.3V @ 3A	No Recovery Time > 500mA (Io)	0ns	15µA @ 600V	60pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH04SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 4A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	4A (DC)	2.3V @ 4A	No Recovery Time > 500mA (Io)	0ns	25µA @ 600V	80pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH05S120AKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 5A TO220-2	Obsolete	Silicon Carbide Schottky	1200V	5A (DC)	1.8V @ 5A	No Recovery Time > 500mA (Io)	0ns	120µA @ 1200V	250pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH05SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 5A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	5A (DC)	2.3V @ 5A	No Recovery Time > 500mA (Io)	0ns	30µA @ 600V	110pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH06SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 6A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	6A (DC)	2.3V @ 6A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	130pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH08S120AKSA1	Infineon Technologies	DIODE SCHOTTKY 1.2KV 7.5A TO220	Obsolete	Silicon Carbide Schottky	1200V	7.5A (DC)	1.8V @ 7.5A	No Recovery Time > 500mA (Io)	0ns	180µA @ 1200V	380pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH08SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 8A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	8A (DC)	2.1V @ 8A	No Recovery Time > 500mA (Io)	0ns	70µA @ 600V	240pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH09SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 9A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	9A (DC)	2.1V @ 9A	No Recovery Time > 500mA (Io)	0ns	80µA @ 600V	280pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH10S120AKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 10A TO220-2	Obsolete	Silicon Carbide Schottky	1200V	10A (DC)	1.8V @ 10A	No Recovery Time > 500mA (Io)	0ns	240µA @ 1200V	500pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH10SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 10A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	10A (DC)	2.1V @ 10A	No Recovery Time > 500mA (Io)	0ns	90µA @ 600V	290pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH12SG60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 12A TO220-2	Discontinued at -	Silicon Carbide Schottky	600V	12A (DC)	2.1V @ 12A	No Recovery Time > 500mA (Io)	0ns	100µA @ 600V	310pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDH15S120AKSA1	Infineon Technologies	DIODE SCHOTTKY 1200V 15A TO220-2	Obsolete	Silicon Carbide Schottky	1200V	15A (DC)	1.8V @ 15A	No Recovery Time > 500mA (Io)	0ns	360µA @ 1200V	750pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-2	-55°C ~ 175°C
IDV02S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 2A TO220-2FP	Obsolete	Silicon Carbide Schottky	600V	2A (DC)	1.9V @ 2A	No Recovery Time > 500mA (Io)	0ns	15µA @ 600V	60pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDV03S60CXKSA1	Infineon Technologies	DIODE SCHOTTKY 600V 3A TO220-2FP	Obsolete	Silicon Carbide Schottky	600V	3A (DC)	1.9V @ 3A	No Recovery Time > 500mA (Io)	0ns	30µA @ 600V	90pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack	PG-TO220-2 Full Pack	-55°C ~ 175°C
1N5408	ON Semiconductor	DIODE GEN PURP 1KV 3A DO201AD	Obsolete	Standard	1000V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C

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