Diodi - Raddrizzatori - Singoli - Dispositivi a semiconduttore discreti - SD175SA30A.T TST30H100CW C0G TST30H120CW C0G TST30H200CW C0G - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
SD175SA30A.T	SMC Diode Solutions	DIODE SCHOTTKY 30V 30A DIE	Active	Schottky	30V	30A	490mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	4mA @ 30V	2200pF @ 5V, 1MHz	Surface Mount	Die	Die	150°C (Max)
TST30H100CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 15A TO220AB	Active	Schottky	100V	15A	780mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST30H120CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 120V 15A TO220AB	Active	Schottky	120V	15A	880mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 120V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST30H200CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 200V 15A TO220AB	Active	Schottky	200V	15A	920mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 200V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
TST30H150CW C0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 15A TO220AB	Active	Schottky	150V	15A	900mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 150V	-	Through Hole	TO-220-3	TO-220AB	-55°C ~ 150°C
IDP08E65D1XKSA1	Infineon Technologies	DIODE GEN PURP 650V 8A TO220-2	Active	Standard	650V	8A	1.7V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	80ns	40µA @ 650V	-	Through Hole	TO-220-2	TO-220-2	-40°C ~ 175°C
CDBDSC3650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	11A (DC)	1.7V @ 3A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	181pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252)	-55°C ~ 175°C
STTH15RQ06WY	STMicroelectronics	DIODE GEN PURP 600V 15A DO247	Active	Standard	600V	15A	2.95V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	20µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
RD2006FR-H	ON Semiconductor	DIODE GEN PURP 600V 20A TO220F	Active	Standard	600V	20A	1.75V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220F	150°C (Max)
VS-ETH3007THN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 650V 30A TO220AC	Active	Standard	650V	30A	2.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	37ns	30µA @ 650V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
RHRP1560-F102	ON Semiconductor	DIODE GEN PURP 600V 15A TO220-2	Active	Standard	600V	15A	2.1V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	40ns	100µA @ 600V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
FERD20M60ST	STMicroelectronics	DIODE RECT 60V 20A TO220AB	Active	FERD (Field Effect Rectifier Diode)	60V	20A	560mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	230µA @ 60V	-	Through Hole	TO-220-3	TO-220AB	175°C (Max)
SF3004PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 30A TO247AD	Active	Standard	200V	30A	950mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 200V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
STTH30RQ06DY	STMicroelectronics	DIODE GEN PURP 600V 30A TO220AC	Active	Standard	600V	30A	2.95V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	40µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	-40°C ~ 175°C
CDBJFSC3650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	3A (DC)	1.7V @ 3A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	190pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F	-55°C ~ 175°C
IDH03G65C5XKSA2	Infineon Technologies	DIODE SCHOTTKY 650V 3A TO220-2-1	Active	Silicon Carbide Schottky	650V	3A (DC)	1.7V @ 3A	No Recovery Time > 500mA (Io)	0ns	50µA @ 650V	100pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
QH05TZ600	Power Integrations	DIODE GEN PURP 600V 5A TO220AC	Active	Standard	600V	5A	3.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	10ns	250µA @ 600V	17pF @ 10V, 1MHz	Through Hole	TO-220-2	TO-220AC	150°C (Max)
VS-E4PH3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-E4PU3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
SF3008PT C0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 600V	175pF @ 4V, 1MHz	Through Hole	TO-247-3	TO-247AD (TO-3P)	-55°C ~ 150°C
STTH31AC06SPF	STMicroelectronics	DIODE GEN PURP 600V 30A TO-3PF	Active	Standard	600V	30A	2V @ 30A	Standard Recovery >500ns, > 200mA (Io)	65ns	10µA @ 600V	-	Through Hole	TO-3P-3 Full Pack	TO-3PF	175°C (Max)
STTH30RQ06WY	STMicroelectronics	DIODE GEN PURP 600V 30A DO247	Active	Standard	600V	30A	2.95V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	40µA @ 600V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
APT30DQ60KG	Microsemi Corporation	DIODE GEN PURP 600V 30A TO220	Active	Standard	600V	30A	2.4V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	25µA @ 600V	-	Through Hole	TO-220-2	TO-220 [K]	-55°C ~ 175°C
VS-EPU3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-APH3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-EPH3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-C4PU3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO247AD	Active	Standard	600V	15A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	15µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-C4PH3006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO247AD	Active	Standard	600V	15A	1.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	15µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
SCS302APC9	Rohm Semiconductor	DIODE SCHOTTKY 650V 2A TO220-2	Active	Silicon Carbide Schottky	650V	2A (DC)	1.5V @ 2A	No Recovery Time > 500mA (Io)	0ns	10.8µA @ 650V	110pF @ 1V, 1MHz	Through Hole	TO-220-2	-	175°C (Max)
CDBDSC5650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	21.5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	424pF @ 0V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252)	-55°C ~ 175°C
VS-C4PU6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-C4PH6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
RHRP3060-F102	ON Semiconductor	DIODE GEN PURP 600V 30A TO220-2	Active	Standard	600V	30A	2.1V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	250µA @ 600V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
VS-E4PH6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AD	Active	Standard	600V	60A	2V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	68ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-E4PU6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AD	Active	Standard	600V	60A	1.7V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	74ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-30ETU12THN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 30A TO220AC	Active	Standard	-	30A	2.68V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	220ns	145µA @ 1200V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
VS-EPU6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 60A TO247AD	Active	Standard	600V	60A	1.5V @ 60A	Fast Recovery =< 500ns, > 200mA (Io)	110ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
APT15DQ60BG	Microsemi Corporation	DIODE GEN PURP 600V 15A TO247	Active	Standard	600V	15A	2.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	19ns	25µA @ 600V	-	Through Hole	TO-247-3	TO-247 [B]	-55°C ~ 175°C
VS-E4PU3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.6V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	65ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-E4PH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	55ns	50µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
STBR3012WY	STMicroelectronics	DIODE GEN PURP 1.2KV 30A DO247	Active	Standard	1200V	30A	1.3V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 1200V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	-40°C ~ 175°C
VS-APH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-EPU3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-CPU6006L-N3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	1.75V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	42ns	30µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-EPH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 30A TO247AD	Active	Standard	600V	30A	2.65V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	26ns	30µA @ 600V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
VS-C4PU3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO247AD	Active	Standard	600V	15A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	15µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
VS-C4PH3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO247AD	Active	Standard	600V	15A	1.9V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	15µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
1N914UR	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO213AA	Active	Standard	75V	200mA	1.2V @ 50mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
CDBJFSC5650-G	Comchip Technology	DIODE SILICON CARBIDE POWER SCHO	Active	Silicon Carbide Schottky	650V	5A (DC)	1.7V @ 5A	No Recovery Time > 500mA (Io)	0ns	100µA @ 650V	430pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack	TO-220F	-55°C ~ 175°C
IDW40E65D1FKSA1	Infineon Technologies	DIODE GEN PURP 650V 80A TO247-3	Active	Standard	650V	80A	1.7V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	129ns	40µA @ 650V	-	Through Hole	TO-247-3	TO-247-3	-40°C ~ 175°C

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