Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - MUR115S M4G MUR120S M4G - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
MUR115S M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AA	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR120S M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	Active	Standard	200V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 200V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR140S M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	Active	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	150µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR160S M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	Active	Standard	600V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	150µA @ 600V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SS22HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS23HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS24HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS25HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS26HM4G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1DL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1DL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	Active	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	10pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1FL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1GL RFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
MUR105S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AA	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR110S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AA	Active	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR115S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AA	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 150V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
MUR140S R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	Active	Standard	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	150µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SK22A R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AC	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK23A R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AC	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SK25A R3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AC	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS22HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A DO214AA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS23HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A DO214AA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS24HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A DO214AA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
SS25HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A DO214AA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS26HR5G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 2A DO214AA	Active	Schottky	60V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES1FL RUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A SUB SMA	Active	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SK29AHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AC	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS115HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A DO214AC	Active	Schottky	150V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS29LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29LHMQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS29LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	Active	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER202G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO204AC	Active	Standard	100V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER203G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO204AC	Active	Standard	200V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER204G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	Active	Standard	300V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S3JB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 3A DO214AA	Active	Standard	600V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 600V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3KB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 3A DO214AA	Active	Standard	800V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 800V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S3MB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 3A DO214AA	Active	Standard	-	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	10µA @ 1000V	40pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS22LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS25LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 2A SUB SMA	Active	Schottky	50V	2A	700mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS23LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 2A SUB SMA	Active	Schottky	30V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS24LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 2A SUB SMA	Active	Schottky	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS22LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 2A SUB SMA	Active	Schottky	20V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C

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