Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - HS1JL MHG HS1GL MQG - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
HS1JL MHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1GL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SUB SMA	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	20pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL MQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL MTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL RQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HS1JL RTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SUB SMA	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS13LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS16LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SF17GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A DO204AL	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SS12LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS12LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A SUB SMA	Active	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 20V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS13LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A SUB SMA	Active	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 30V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS14LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A SUB SMA	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS15LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LHR3G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LHRFG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS15LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A SUB SMA	Active	Schottky	50V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 50V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS16LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A SUB SMA	Active	Schottky	60V	1A	700mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SRT12HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT14HA1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT12HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT14HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SF21G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO204AC	Active	Standard	50V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
F1T1G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
F1T1G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	Active	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS19LHRHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHMHG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHMQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHMTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRQG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRTG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS19LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A SUB SMA	Active	Schottky	90V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
S1GB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JB M4G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	Active	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	Active	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
UF1B R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	Active	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
UF1D R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	Active	Standard	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
US1AHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AC	Active	Standard	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
US1BHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	Active	Standard	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C

Produttori per Diodi - Raddrizzatori - Singoli