Taiwan Semiconductor Distributor - Diodi - Raddrizzatori - Singoli - RSFKLHRHG RSFMLHRHG - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
RSFKLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	Active	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHRHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	Active	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SRT12 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT14 R0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
RSFGLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	Active	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	Active	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHMHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	Active	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGLHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	Active	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	Active	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	Active	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	Active	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKLHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	Active	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKLHMTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	Active	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	Active	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFKLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 500MA SUBSMA	Active	Standard	800V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHMQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	Active	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHRQG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	Active	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFMLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 500MA SUB SMA	Active	Standard	-	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGLHRFG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
BAT43X RSG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA SOD523F	Active	Schottky	30V	200mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	5ns	500nA @ 25V	10pF @ 1V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523F	-55°C ~ 150°C
RSFGLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFGLHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 500MA SUBSMA	Active	Standard	400V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	Active	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
RSFJLHRVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 500MA SUBSMA	Active	Standard	600V	500mA	1.3V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS115LS RVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 1A SOD123HE	Active	Schottky	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	80pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
SRT12 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT14 A1G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT12 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A TS-1	Active	Schottky	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT13 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A TS-1	Active	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 30V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SRT14 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A TS-1	Active	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
SF17G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A DO204AL	Active	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF18G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	Active	Standard	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1DLS RQG	Taiwan Semiconductor Corporation	DIODE 1.2A 200V SOD-123HE	Active	Standard	200V	1.2A	1.3V @ 1.2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
S1GLS RQG	Taiwan Semiconductor Corporation	DIODE 1.2A 400V SOD-123HE	Active	Standard	400V	1.2A	1.3V @ 1.2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	-	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
FR151G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO204AC	Active	Standard	50V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR152G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	Active	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR153G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO204AC	Active	Standard	200V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR154G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO204AC	Active	Standard	400V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR155G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO204AC	Active	Standard	600V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR156G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1.5A DO204AC	Active	Standard	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
FR157G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	Active	Standard	-	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
F1T2GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	Active	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
FR152G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO204AC	Active	Standard	100V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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