Microsemi Distributor - Diodi - Raddrizzatori - Singoli - S35140 S35160 - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo diodo	Tensione - DC Reverse (Vr) (Max)	Corrente - Rettificato medio (Io)	Voltage - Forward (Vf) (Max) @ If	Velocità	Tempo di recupero inverso (trr)	Corrente - Perdita inversa @ Vr	Capacità @ Vr, F	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore	Temperatura operativa - Giunzione
S35140	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S35160	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S3520	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S3520PF	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S3540	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S3540PF	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S3560	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S3560PF	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
S3580	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N6628US	Microsemi Corporation	DIODE GEN PURP 660V 1.75A D5B	Active	Standard	660V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 660V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTX1N6629US	Microsemi Corporation	DIODE GEN PURP 880V 1.4A D5B	Active	Standard	880V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 880V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTX1N6631US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1.4A D5B	Active	Standard	1100V	1.4A	1.6V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	4µA @ 1100V	40pF @ 10V, 1MHz	Surface Mount	E-MELF	D-5B	-65°C ~ 150°C
JANTX1N6627US	Microsemi Corporation	DIODE GEN PURP 440V 1.75A D5B	Active	Standard	440V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 440V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTXV1N6076	Microsemi Corporation	DIODE GEN PURP 50V 1.3A AXIAL	Active	Standard	50V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 50V	-	Through Hole	E, Axial	E-PAK	-65°C ~ 155°C
JANTXV1N6077	Microsemi Corporation	DIODE GEN PURP 100V 1.3A AXIAL	Active	Standard	100V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 100V	-	Through Hole	E, Axial	E-PAK	-65°C ~ 155°C
JAN1N4148UB2	Microsemi Corporation	DIODE GEN PURP 75V 200MA SMD	Active	Standard	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	UB2	-65°C ~ 200°C
JAN1N4148UB2R	Microsemi Corporation	DIODE GEN PURP 75V 200MA SMD	Active	Standard	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	UB2R	-65°C ~ 200°C
1N6701US	Microsemi Corporation	DIODE SCHOTTKY 30V 5A D5C	Active	Schottky	30V	5A	470mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	SQ-MELF, C	D-5C	-65°C ~ 125°C
JAN1N6078	Microsemi Corporation	DIODE GEN PURP 150V 1.3A AXIAL	Active	Standard	150V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	E, Axial	E-PAK	-65°C ~ 155°C
R3410	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R34100	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R34120	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R34140	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R34160	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3420	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3440	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3460	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3480	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R3510	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R35100	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R35120	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R35140	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
R35160	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N4148UB	Microsemi Corporation	DIODE GEN PURP 75V 200MA UB	Active	Standard	75V	200mA	1.2V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	UB	-65°C ~ 200°C
JAN1N6642UBCC	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
JAN1N6642UBD	Microsemi Corporation	DIODE GEN PURP 75V 300MA UB	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	3-SMD, No Lead	3-UB (3.09x2.45)	-65°C ~ 175°C
1N6700US	Microsemi Corporation	DIODE SCHOTTKY 20V 5A D5C	Active	Schottky	20V	5A	470mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	SQ-MELF, C	D-5C	-65°C ~ 125°C
SBR2535	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
SBR2545	Microsemi Corporation	RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N4148UB2	Microsemi Corporation	DIODE GEN PURP 75V 200MA SMD	Active	Standard	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	UB2	-65°C ~ 200°C
JANTX1N4148UB2R	Microsemi Corporation	DIODE GEN PURP 75V 200MA SMD	Active	Standard	75V	200mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	20ns	500nA @ 75V	4pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	UB2R	-65°C ~ 200°C
JANTXV1N6627US	Microsemi Corporation	DIODE GEN PURP 440V 1.75A D5B	Active	Standard	440V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 440V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTXV1N6627U	Microsemi Corporation	DIODE GEN PURP 400V 1.75A E-MELF	Active	Standard	400V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 400V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
JANTX1N6628U	Microsemi Corporation	DIODE GEN PURP 600V 1.75A E-MELF	Active	Standard	600V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 600V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
1N5711UBCA	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5711UBCC	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5712UBCC	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N5807URS	Microsemi Corporation	DIODE GEN PURP 50V 3A BPKG	Active	Standard	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTXV1N5809URS	Microsemi Corporation	DIODE GEN PURP 100V 3A BPKG	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTXV1N5811URS	Microsemi Corporation	DIODE GEN PURP 150V 3A BPKG	Active	Standard	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C

Produttori per Diodi - Raddrizzatori - Singoli