Micron Technology Distributor - Memoria - MT25QU02GCBB8E12-0AAT TR MT25QU128ABA1EW7-MSIT TR - CHIPSIC

Numero di parte	Produttore / Marca	Breve descrizione	Stato parte	Tipo di memoria	Formato di memoria	Tecnologia	Dimensione della memoria	Frequenza di clock	Scrivi il tempo di ciclo - Parola, Pagina	Tempo di accesso	Interfaccia di memoria	Tensione - Fornitura	temperatura di esercizio	Tipo di montaggio	Pacchetto / caso	Pacchetto dispositivo fornitore
MT25QU02GCBB8E12-0AAT TR	Micron Technology Inc.	IC FLASH 2G SPI 133MHZ 24TPBGA	Active	Non-Volatile	FLASH	FLASH - NOR	2Gb (256M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 105°C (TC)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MT25QU128ABA1EW7-MSIT TR	Micron Technology Inc.	IC FLASH 128M SPI 133MHZ 8WPDFN	Active	Non-Volatile	FLASH	FLASH - NOR	128Mb (16M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WPDFN (6x5)(MLP8)
MT25QU512ABB8E12-0AUT TR	Micron Technology Inc.	IC FLASH 512M SPI 133MHZ TBGA	Active	Non-Volatile	FLASH	FLASH - NOR	512Mb (64M x 8)	133MHz	8ms, 2.8ms	-	SPI	1.7 V ~ 2 V	-40°C ~ 125°C (TA)	-	-	-
MT29AZ5A3CHHWD-18AAT.84F TR	Micron Technology Inc.	IC FLASH RAM 4G PARALLEL 533MHZ	Active	Non-Volatile	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	4Gb (512M x 8)(NAND), 8Gb (512M x 16)(LPDDR2)	533MHz	-	-	Parallel	1.7 V ~ 1.9 V	-40°C ~ 105°C (TA)	-	-	-
MT29F128G08AMCDBJ5-6ITR:D TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 167MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F128G08AMEDBJ5-12:D TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08CBCEBJ4-37:E TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F128G08CBCEBRT-37B:E TR	Micron Technology Inc.	IC FLASH 128G PARALLEL 267MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	128Gb (16G x 8)	267MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F1G01ABAFD12-IT:F TR	Micron Technology Inc.	IC FLASH 1G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	1Gb (1G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F1G01ABAFDSF-IT:F TR	Micron Technology Inc.	IC FLASH 1G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	1Gb (1G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F1G01ABBFDSF-IT:F TR	Micron Technology Inc.	IC FLASH 1G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	1Gb (1G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F1T08EEHAFJ4-3TES:A TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F1T08EMHAFJ4-3R:A TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F1T08EMHAFJ4-3RES:A TR	Micron Technology Inc.	IC FLASH 1T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	1Tb (128G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08AMEBBH7-12:B TR	Micron Technology Inc.	IC FLASH 256G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	256Gb (32G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F256G08EBHAFJ4-3R:A TR	Micron Technology Inc.	IC FLASH 256G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	256Gb (32G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2G01ABAGD12-AAT:G TR	Micron Technology Inc.	IC FLASH 2G SPI 83MHZ TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	83MHz	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F2G01ABAGD12-IT:G TR	Micron Technology Inc.	IC FLASH 2G SPI 83MHZ TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	83MHz	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2G01ABAGDSF-AAT:G TR	Micron Technology Inc.	IC FLASH 2G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F2G01ABBGDSF-IT:G TR	Micron Technology Inc.	IC FLASH 2G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Gb (2G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2G08ABAGAWP-ITE:G TR	Micron Technology Inc.	IC FLASH 2G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (256M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F2G16ABAEAWP-AAT:E TR	Micron Technology Inc.	IC FLASH 2G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (128M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
MT29F2G16ABBEAH4-AAT:E TR	Micron Technology Inc.	IC FLASH 2G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	2Gb (128M x 16)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT29F2T08EMHAFJ4-3T:A TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F2T08EMHAFJ4-3TES:A TR	Micron Technology Inc.	IC FLASH 2T PARALLEL 333MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	2Tb (256G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F32G08ABCDBJ4-6ITR:D TR	Micron Technology Inc.	IC FLASH 32G PARALLEL 166MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	32Gb (4G x 8)	166MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABAFD12-AATES:F TR	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G01ABAFD12-ITES:F TR	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABAFDWB-ITES:F TR	Micron Technology Inc.	IC FLASH 4G SPI UPDFN	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABBFD12-AATES:F TR	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G01ABBFD12-ITES:F TR	Micron Technology Inc.	IC FLASH 4G SPI TBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ABBFDWB-ITES:F TR	Micron Technology Inc.	IC FLASH 4G SPI UPDFN	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G01ADAGDSF-IT:G TR	Micron Technology Inc.	IC FLASH 4G SPI SOIC	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Gb (4G x 1)	-	-	-	SPI	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABAFAH4-AATES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G08ABAFAH4-AITES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABAFAWP-ITES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G08ABBFAH4-AATES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (512M x 8)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT29F4G16ABAFAH4-AATES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4G16ABAFAH4-AITES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G16ABAFAWP-ITES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP	Obsolete	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F4G16ABBFAH4-AATES:F TR	Micron Technology Inc.	IC FLASH 4G PARALLEL FBGA	Active	Non-Volatile	FLASH	FLASH - NAND	4Gb (256M x 16)	-	-	-	Parallel	1.7 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MT29F4T08EUHAFM4-3T:A TR	Micron Technology Inc.	IC FLASH 4T PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	4Tb (512G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08AUEBBH8-12:B TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F512G08EEHAFJ4-3R:A TR	Micron Technology Inc.	IC FLASH 512G PARALLEL 333MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	512Gb (64G x 8)	333MHz	-	-	Parallel	2.5 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08ABEBBH6-12:B TR	Micron Technology Inc.	IC FLASH 64G PARALLEL 83MHZ	Obsolete	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	83MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08AECDBJ4-6ITR:D TR	Micron Technology Inc.	IC FLASH 64G PARALLEL 166MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	166MHz	-	-	Parallel	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT29F64G08CBCGBSX-37B:G TR	Micron Technology Inc.	IC FLASH 64G PARALLEL 167MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08CBCGBSX-37BES:G TR	Micron Technology Inc.	IC FLASH 64G PARALLEL 167MHZ	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	167MHz	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08CBCGBWP-B:G TR	Micron Technology Inc.	IC FLASH 64G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT29F64G08CBCGBWP-BES:G TR	Micron Technology Inc.	IC FLASH 64G PARALLEL TSOP	Active	Non-Volatile	FLASH	FLASH - NAND	64Gb (8G x 8)	-	-	-	Parallel	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-

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