IPD80R3K3P7ATMA1 Infineon Technologies Distributor
| Manufacturer Part Number | IPD80R3K3P7ATMA1 |
|---|---|
| Manufacturer / Brand | Infineon Technologies |
| Available Quantity | 61990 Pieces |
| Unit Price | Quote by Email ([email protected]) |
| Brife Description | MOSFET N-CH 800V 1.9A TO252-3 |
| Product Category | Transistors - FETs, MOSFETs - Single |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Delivery Time | 1-2 Days |
| Date Code (D/C) | New |
| Datasheet Download | IPD80R3K3P7ATMA1.pdf |
Please fill the below inquiry form, we will reply you the quotation for IPD80R3K3P7ATMA1 within 24 hours.
- Part Number
- IPD80R3K3P7ATMA1
- Production Status (Lifecycle)
- Contact us
- Manufacturer Lead time
- 6-8 weeks
- Condition
- New & Unused, Original Sealed
- Shipping way
- DHL / FEDEX / UPS / TNT / EMS / Normal Post
- Part Status
- Active
- FET Type
- N-Channel
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 800V
- Current - Continuous Drain (Id) @ 25°C
- 1.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Rds On (Max) @ Id, Vgs
- 3.3 Ohm @ 590mA, 10V
- Vgs(th) (Max) @ Id
- 3.5V @ 30µA
- Gate Charge (Qg) (Max) @ Vgs
- 5.8nC @ 10V
- Vgs (Max)
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds
- 120pF @ 500V
- FET Feature
-
- Power Dissipation (Max)
- 18W (Tc)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Mounting Type
- Surface Mount
- Supplier Device Package
- PG-TO252-3
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Weight
- Contact us
- Application
- Email for details
- Replacement Part
- IPD80R3K3P7ATMA1
Related Components made by Infineon Technologies
Related Keywords For "IPD80"
| Part Number | Manufacturer | Description |
|---|---|---|
| IPD800N06NGBTMA1 | Infineon Technologies | MOSFET N-CH 60V 16A TO-252 |
| IPD80N04S306ATMA1 | Infineon Technologies | MOSFET N-CH 40V 90A TO252-3 |
| IPD80N04S306BATMA1 | Infineon Technologies | MOSFET N-CHANNEL_30/40V |
| IPD80N06S3-09 | Infineon Technologies | MOSFET N-CH 55V 80A TO252-3 |
| IPD80P03P4L07ATMA1 | Infineon Technologies | MOSFET P-CH 30V 80A TO252-3 |
| IPD80R1K0CEATMA1 | Infineon Technologies | MOSFET N-CH 800V 5.7A TO252-3 |
| IPD80R1K0CEBTMA1 | Infineon Technologies | MOSFET N-CH 800V 5.7A TO252-3 |
| IPD80R1K2P7ATMA1 | Infineon Technologies | MOSFET N-CH 800V 4.5A TO252-3 |
| IPD80R1K4CEATMA1 | Infineon Technologies | MOSFET N-CH 800V 3.9A TO252-3 |
| IPD80R1K4CEBTMA1 | Infineon Technologies | MOSFET N-CH 800V 3.9A TO252-3 |
| IPD80R1K4P7ATMA1 | Infineon Technologies | MOSFET N-CH 800V 4A DPAK |
| IPD80R280P7ATMA1 | Infineon Technologies | MOSFET N-CH 800V 17A TO252 |