Manufacturer Part NumberIPD50R650CEATMA1
Manufacturer / BrandInfineon Technologies
Available Quantity214870 Pieces
Unit PriceQuote by Email ([email protected])
Brife DescriptionMOSFET N CH 500V 6.1A PG-TO252
Product CategoryTransistors - FETs, MOSFETs - Single
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Delivery Time1-2 Days
Date Code (D/C)New
Datasheet Download IPD50R650CEATMA1.pdf

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Part Number
IPD50R650CEATMA1
Production Status (Lifecycle)
Contact us
Manufacturer Lead time
6-8 weeks
Condition
New & Unused, Original Sealed
Shipping way
DHL / FEDEX / UPS / TNT / EMS / Normal Post
Part Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500V
Current - Continuous Drain (Id) @ 25°C
6.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
650 mOhm @ 1.8A, 13V
Vgs(th) (Max) @ Id
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
15nC @ 10V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
342pF @ 100V
FET Feature
-
Power Dissipation (Max)
69W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Weight
Contact us
Application
Email for details
Replacement Part
IPD50R650CEATMA1

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