Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
ON Semiconductor IC GATE DVR HI/LOW SIDE 8-SOIC ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 22 V1.2V, 2.5V4.5A, 4.5ANon-Inverting600V25ns, 20ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOP
ON Semiconductor IC GATE DRIVER HI LOW SIDE 14SOP Not For New DesignsHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V1.2V, 2.5V4.5A, 4.5ANon-Inverting600V25ns, 20ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOP
ON Semiconductor IC DRIVER GATE HI/LO SIDE SOP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V1.2V, 2.5V4.5A, 4.5ANon-Inverting600V25ns, 20ns-40°C ~ 150°C (TJ)Surface Mount14-SOIC (0.154", 3.90mm Width)14-SOP
Microchip Technology IC MOSFET DVR 4.5A DUAL 8DFN ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.5A DUAL 8SOIC ActiveLow-SideIndependent2IGBT, N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5ANon-Inverting
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15ns, 18ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 4.5A DL HS 16-SOIC ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting
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12ns, 12ns-40°C ~ 150°C (TJ)Surface Mount16-SOIC (0.295", 7.50mm Width)16-SOIC
Microchip Technology IC MOSFET DVR 3A DUAL HS 8DFN ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5ANon-Inverting
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12ns, 12ns-40°C ~ 150°C (TJ)Surface Mount8-VDFN Exposed Pad8-DFN-S (6x5)
Microchip Technology IC MOSFET DVR 3A DUAL HS 8SOIC ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5ANon-Inverting
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12ns, 12ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Microchip Technology IC MOSFET DVR 3A DUAL HS 8DIP ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5ANon-Inverting
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12ns, 12ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Microchip Technology IC MOSFET DVR 3A DUAL HS 8SOIC ActiveLow-SideIndependent2N-Channel, P-Channel MOSFET4.5 V ~ 18 V0.8V, 2.4V4.5A, 4.5AInverting, Non-Inverting
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12ns, 12ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC