Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
Texas Instruments IC SYNC MOSFET DVR 4A 8SON ActiveHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 8.8 V
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2A, 2ANon-Inverting33V10ns, 10ns-40°C ~ 125°C (TJ)Surface Mount8-VDFN Exposed Pad8-SON (3x3)
Texas Instruments IC SYNC MOSFET DVR 4A 8SON ActiveHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 8.8 V
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Non-Inverting33V10ns, 10ns-40°C ~ 125°C (TJ)Surface Mount8-VDFN Exposed Pad8-SON (3x3)
Texas Instruments IC SINK SYNC MOSFET DVR 2A 8SON ActiveHalf-BridgeSynchronous2N-Channel MOSFET6.8 V ~ 8.8 V
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Non-Inverting33V10ns, 10ns-40°C ~ 125°C (TJ)Surface Mount8-VDFN Exposed Pad8-SON (3x3)
Texas Instruments IC MOSFET DRVR SYNC DUAL 8SON ActiveHalf-BridgeSynchronous2N-Channel MOSFET4.5 V ~ 5.5 V0.7V, 4V
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Non-Inverting
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15ns, 10ns-40°C ~ 105°C (TJ)Surface Mount8-VDFN Exposed Pad8-SON (3x3)
Texas Instruments IC GATE DVR LO-SIDE DL 5A 8SON ActiveLow-SideIndependent2IGBT, N-Channel MOSFET4.5 V ~ 18 V1V, 2.3V5A, 5ANon-Inverting
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7ns, 6ns-40°C ~ 140°C (TJ)Surface Mount8-WDFN Exposed Pad8-SON (3x3)
Texas Instruments IC GATE DVR LO-SIDE DL 5A 8SON ActiveLow-SideIndependent2IGBT, N-Channel MOSFET4.5 V ~ 18 V1V, 2.3V5A, 5ANon-Inverting
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7ns, 6ns-40°C ~ 140°C (TJ)Surface Mount8-WDFN Exposed Pad8-SON (3x3)
Texas Instruments IC GATE DVR LO-SIDE DL 5A 8SON ActiveLow-SideIndependent2IGBT, N-Channel MOSFET4.5 V ~ 18 V1V, 2.3V5A, 5AInverting, Non-Inverting
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7ns, 6ns-40°C ~ 140°C (TJ)Surface Mount8-WDFN Exposed Pad8-SON (3x3)
Texas Instruments IC GATE DVR LO-SIDE DL 5A 8SON ActiveLow-SideIndependent2IGBT, N-Channel MOSFET4.5 V ~ 18 V
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5A, 5AInverting, Non-Inverting
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7ns, 6ns-40°C ~ 140°C (TJ)Surface Mount8-WDFN Exposed Pad8-SON (3x3)
Texas Instruments IC GATE DVR LOW SIDE 8SON ActiveLow-SideIndependent2IGBT, N-Channel MOSFET4.5 V ~ 18 V
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5A, 5ANon-Inverting
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7ns, 6ns-40°C ~ 140°C (TJ)Surface Mount8-WDFN Exposed Pad8-SON (3x3)