Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
ON Semiconductor IC GATE DVR SGL 9A HS 8-MLP ActiveLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V
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10.6A, 11.4ANon-Inverting
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23ns, 19ns-55°C ~ 150°C (TJ)Surface Mount8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor IC GATE DVR SGL 9A LOSIDE 8-MLP ActiveLow-SideSingle1N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V10.6A, 11.4ANon-Inverting
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23ns, 19ns-55°C ~ 150°C (TJ)Surface Mount8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor IC GATE DVR DUAL 4A 8-MLP ActiveLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V5A, 5ANon-Inverting
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12ns, 9ns-40°C ~ 125°C (TA)Surface Mount8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor IC GATE DVR LOW DUAL 4A HS 8MLP ActiveLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V5A, 5AInverting, Non-Inverting
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12ns, 9ns-40°C ~ 125°C (TA)Surface Mount8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor IC GATE DVR DUAL 2A 8-MLP ActiveLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V
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3A, 3AInverting
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12ns, 9ns-40°C ~ 125°C (TJ)Surface Mount8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor IC GATE DRVR DUAL 4A CMOS 8MLP ActiveLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V
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3A, 3ANon-Inverting
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12ns, 9ns-40°C ~ 125°C (TJ)Surface Mount8-WDFN Exposed Pad8-MLP (3x3)
ON Semiconductor IC GATE DVR DUAL 2A 8-MLP ActiveLow-SideIndependent2N-Channel MOSFET4.5 V ~ 18 V0.8V, 2V3A, 3ANon-Inverting
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12ns, 9ns-40°C ~ 125°C (TJ)Surface Mount8-WDFN Exposed Pad8-MLP (3x3)