Numéro d'article Fabricant / marque Brève description État de la pièceConfiguration pilotéeType de canalNombre de pilotesType de porteTension - AlimentationTension logique - VIL, VIHCourant - sortie de crête (source, évier)Type d'entréeTension latérale élevée - Max (Bootstrap)Rise / Fall Time (Typ)Température de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
Infineon Technologies IC DRIVER HI SIDE RECHARGE 8-SOI ObsoleteHigh-SideSingle1N-Channel MOSFET5 V ~ 20 V1.4V, 3V1.5A, 1.5AInverting150V200ns, 100ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HI SIDE RECHARGE 8SOIC ObsoleteHigh-SideSingle1N-Channel MOSFET5 V ~ 20 V1.4V, 3V1.5A, 1.5AInverting150V200ns, 100ns-55°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DRIVER HALF-BRIDGE 8-DIP ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF-BRIDGE 8-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DVR HALF BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC HALF BRIDGE DRIVER 8SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC