Numéro d'article Fabricant / marque Brève description État de la pièceType de mémoireFormat de la mémoireLa technologieTaille mémoireFréquence d'horlogeÉcrire un temps de cycle - Word, PageTemps d'accèsInterface de mémoireTension - AlimentationTempérature de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)200MHz15ns700psParallel2.3 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)200MHz15ns700psParallel2.5 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)200MHz15ns700psParallel2.5 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512M (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (64M x 8)200MHz15ns700psParallel2.5 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
Winbond Electronics IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)200MHz15ns55nsParallel2.3 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)