Numéro d'article Fabricant / marque Brève description État de la pièceType de mémoireFormat de la mémoireLa technologieTaille mémoireFréquence d'horlogeÉcrire un temps de cycle - Word, PageTemps d'accèsInterface de mémoireTension - AlimentationTempérature de fonctionnementType de montagePaquet / casPackage de périphérique fournisseur
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 60TWBGA ActiveVolatileDRAMSDRAM - DDR21Gb (128M x 8)333MHz15ns450psParallel1.7 V ~ 1.9 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 60TWBGA ActiveVolatileDRAMSDRAM - DDR21Gb (128M x 8)333MHz15ns450psParallel1.7 V ~ 1.9 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 1G PARALLEL 60TWBGA ActiveVolatileDRAMSDRAM - DDR21Gb (128M x 8)400MHz15ns400psParallel1.7 V ~ 1.9 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TWBGA ActiveVolatileDRAMSDRAM - DDR2512Mb (64M x 8)400MHz15ns400psParallel1.7 V ~ 1.9 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TWBGA (8x10.5)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TWBGA ActiveVolatileDRAMSDRAM - DDR2512Mb (64M x 8)400MHz15ns400psParallel1.7 V ~ 1.9 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TWBGA (8x10.5)