Microsemi Distributor - Diodes - Redresseurs - Simples - JAN1N5188 JANTXV1N5712UBCC - CHIPSIC

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	Type de diode	Tension - DC Reverse (Vr) (Max)	Courant - Rectifié moyen (Io)	Tension - Avant (Vf) (Max) @ Si	La vitesse	Temps de récupération inverse (trr)	Courant - Fuite inverse @ Vr	Capacitance @ Vr, F	Type de montage	Paquet / cas	Package de périphérique fournisseur	Température de fonctionnement - Jonction
JAN1N5188	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	2µA @ 400V	-	Through Hole	B, Axial	Axial	-65°C ~ 175°C
JANTXV1N5712UBCC	Microsemi Corporation	SCHOTTKY DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6545	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5550US	Microsemi Corporation	DIODE GEN PURP 200V 3A D5B	Active	Standard	200V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 200V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N3595AUS	Microsemi Corporation	DIODE GEN PURP 125V 150MA	Active	Standard	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	2nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
JAN1N5619US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	25pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTXV1N5186	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Standard Recovery >500ns, > 200mA (Io)	-	2µA @ 100V	-	Through Hole	B, Axial	Axial	-65°C ~ 175°C
JAN1N5802US	Microsemi Corporation	DIODE GEN PURP 50V 2.5A D5A	Active	Standard	50V	2.5A	975mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 2.5A D5A	Active	Standard	150V	2.5A	975mV @ 2.5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5711-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO35	Active	Schottky	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 70V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
JANTX1N4249	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N6642US	Microsemi Corporation	DIODE GEN PURP 100V 300MA D5B	Active	Standard	100V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 100V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N6642U	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5D	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500nA @ 75V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
JAN1N6641US	Microsemi Corporation	DIODE GEN PURP 50V 300MA B-MELF	Active	Standard	50V	300mA	1.1V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	100nA @ 50V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTX1N4942	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
JANTX1N4946	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N4942	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N4944	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Active	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N4946	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	25pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N5618US	Microsemi Corporation	DIODE GEN PURP 600V 1A D5A	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N5622US	Microsemi Corporation	DIODE GEN PURP 1KV 1A D5A	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JAN1N5819UR-1/TR	Microsemi Corporation	DIODE SCHOTTKY 45V 1A DO213AB	Active	Schottky	45V	1A	490mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 45V	70pF @ 5V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB (MELF, LL41)	-65°C ~ 125°C
JANTXV1N5614	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 200V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTXV1N5622US	Microsemi Corporation	DIODE GEN PURP 1KV 1A D5A	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JANTXV1N5615US	Microsemi Corporation	DIODE GEN PURP 200V 1A D-5A	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 600V	45pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTXV1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A A-MELF	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 400V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTXV1N5619US	Microsemi Corporation	DIODE GEN PURP 600V 1A A-MELF	Active	Standard	600V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	500nA @ 600V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N6546	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
JAN1N5419	Microsemi Corporation	DIODE GEN PURP 500V 3A AXIAL	Active	Standard	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6857UR-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5807US	Microsemi Corporation	DIODE GEN PURP 50V 3A B-MELF	Active	Standard	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JANTX1N5809US	Microsemi Corporation	DIODE GEN PURP 100V 3A B-MELF	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JAN1N6638U	Microsemi Corporation	DIODE GEN PURP 150V 300MA B-MELF	Active	Standard	150V	300mA	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 150V	2.5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N6639US	Microsemi Corporation	DIODE GEN PURP 75V 300MA B-MELF	Active	Standard	75V	300mA	1.2V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 75V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTXV1N3595-1	Microsemi Corporation	DIODE GEN PURP 125V 150MA DO204	Active	Standard	125V	150mA (DC)	1V @ 200mA	Small Signal =< 200mA (Io), Any Speed	3µs	1nA @ 125V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
JANTXV1N5622	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
1N6651	Microsemi Corporation	RECTIFIER DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N5420US	Microsemi Corporation	DIODE GEN PURP 600V 3A D5B	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
JANTXV1N5415	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL	Active	Standard	50V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 50V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5621US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A	Active	Standard	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 800V	20pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTX1N5620US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A	Active	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 800V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5622	Microsemi Corporation	DIODE GEN PURP 1KV 1A AXIAL	Active	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JANTX1N6639US	Microsemi Corporation	DIODE GEN PURP 75V 300MA D-5D	Active	Standard	75V	300mA (DC)	1.2V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 75V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
JANTX1N6638U	Microsemi Corporation	DIODE GEN PURP 125V 300MA B-MELF	Active	Standard	125V	300mA (DC)	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5ns	500nA @ 125V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
MSC030SDA120K	Microsemi Corporation	UNRLS FG GEN2 SIC SBD TO-220	Active	Silicon Carbide Schottky	1200V	30A (DC)	1.8V @ 1A	No Recovery Time > 500mA (Io)	0ns	-	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
JANTX1N5416US	Microsemi Corporation	DIODE GEN PURP 100V 3A D5B	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTXV1N5551	Microsemi Corporation	DIODE GEN PURP 400V 5A	Active	Standard	400V	5A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5187	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	2µA @ 200V	-	Through Hole	B, Axial	Axial	-65°C ~ 175°C
JANTXV1N5554	Microsemi Corporation	DIODE GEN PURP 1KV 5A AXIAL	Active	Standard	1000V	5A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6547	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-

Fabricants pour Diodes - Redresseurs - Simples