Infineon Technologies Distributor - Transistors - FET, MOSFET - Simples - IPW65R190E6FKSA1 IPB025N10N3GE8187ATMA1 - CHIPSIC

Numéro d'article	Fabricant / marque	Brève description	État de la pièce	FET Type	La technologie	Drain à la tension de source (Vdss)	Courant - Drain continu (Id) @ 25 ° C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs (th) (Max) @ Id	Charge de porte (Qg) (Max) @ Vgs	Vgs (Max)	Capacitance d'entrée (Ciss) (Max) @ Vds	FET Caractéristique	Dissipation de puissance (Max)	Température de fonctionnement	Type de montage	Package de périphérique fournisseur	Paquet / cas
IPW65R190E6FKSA1	Infineon Technologies	MOSFET N-CH 650V 20.2A TO247	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	650V	20.2A (Tc)	10V	190 mOhm @ 7.3A, 10V	3.5V @ 730µA	73nC @ 10V	±20V	1620pF @ 100V	-	151W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPB025N10N3GE8187ATMA1	Infineon Technologies	MOSFET N-CH 100V 180A TO263-7	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	100V	180A	6V, 10V	2.5 mOhm @ 100A, 10V	3.5V @ 275µA	206nC @ 10V	±20V	14800pF @ 50V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-7, D²Pak (6 Leads + Tab)
IPC300N15N3RX1SA2	Infineon Technologies	MOSFET N-CH 150V 1A SAWN ON FOIL	Active	N-Channel	MOSFET (Metal Oxide)	150V	1A (Tj)	10V	100 mOhm @ 2A, 10V	4V @ 250µA	-	-	-	-	-	-	Surface Mount	Sawn on foil	Die
AUIRFS3004TRL	Infineon Technologies	MOSFET N-CH 40V 340A D2PAK	Active	N-Channel	MOSFET (Metal Oxide)	40V	195A (Tc)	10V	1.75 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	±20V	9200pF @ 25V	-	380W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D-PAK (TO-252AA)	TO-252-3, DPak (2 Leads + Tab), SC-63
SPP20N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-220	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650V	20.7A (Tc)	10V	220 mOhm @ 13.1A, 10V	5V @ 1mA	124nC @ 10V	±20V	2400pF @ 25V	-	208W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
SPA20N60CFDXKSA1	Infineon Technologies	MOSFET N-CH 600V 20.7A TO220-3	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600V	20.7A (Tc)	10V	220 mOhm @ 13.1A, 10V	5V @ 1mA	124nC @ 10V	±20V	2400pF @ 25V	-	35W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPI030N10N3GXKSA1	Infineon Technologies	MOSFET N-CH 100V 100A	Active	N-Channel	MOSFET (Metal Oxide)	100V	100A (Tc)	6V, 10V	3 mOhm @ 100A, 10V	3.5V @ 275µA	206nC @ 10V	±20V	14800pF @ 50V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
AUIRFS3004-7TRL	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK-7P	Active	N-Channel	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	1.25 mOhm @ 195A, 10V	4V @ 250µA	240nC @ 10V	±20V	9130pF @ 25V	-	380W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D²Pak (6 Leads + Tab)
AUIRFSA8409-7TRL	Infineon Technologies	MOSFET NCH 40V 523A D2PAK	Active	N-Channel	MOSFET (Metal Oxide)	40V	523A (Tc)	10V	0.69 mOhm @ 100A, 10V	3.9V @ 250µA	460nC @ 10V	±20V	13975pF @ 25V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D²Pak (6 Leads + Tab)
AUIRF7759L2TR	Infineon Technologies	MOSFET N-CH 75V 160A DIRECTFET	Active	N-Channel	MOSFET (Metal Oxide)	75V	375A (Tc)	10V	2.3 mOhm @ 96A, 10V	4V @ 250µA	300nC @ 10V	±20V	12222pF @ 25V	-	3.3W (Ta), 125W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	DIRECTFET L8	DirectFET™ Isometric L8
IRFSL7730PBF	Infineon Technologies	MOSFET N-CH 75V 195A TO262	Active	N-Channel	MOSFET (Metal Oxide)	75V	195A (Tc)	6V, 10V	2.6 mOhm @ 100A, 10V	3.7V @ 250µA	407nC @ 10V	±20V	13660pF @ 25V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA
IPC60R299CPX1SA2	Infineon Technologies	MOSFET N-CH BARE DIE	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI041N12N3GAKSA1	Infineon Technologies	MOSFET N-CH 120V 120A TO262-3	Active	N-Channel	MOSFET (Metal Oxide)	120V	120A (Tc)	10V	4.1 mOhm @ 100A, 10V	4V @ 270µA	211nC @ 10V	±20V	13800pF @ 60V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
IPB060N15N5ATMA1	Infineon Technologies	MOSFET N-CH 150V 136A TO263-7	Active	N-Channel	MOSFET (Metal Oxide)	150V	136A (Tc)	8V, 10V	6 mOhm @ 68A, 10V	4.6V @ 180µA	68nC @ 10V	±20V	5300pF @ 75V	-	250W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
AUIRFSL4115	Infineon Technologies	MOSFET N CH 150V 99A TO262	Active	N-Channel	MOSFET (Metal Oxide)	150V	99A (Tc)	10V	12.1 mOhm @ 62A, 10V	5V @ 250µA	120nC @ 10V	±20V	5270pF @ 50V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-3 Long Leads, I²Pak, TO-262AA
SPP20N60S5HKSA1	Infineon Technologies	HIGH POWERLEGACY	Not For New Designs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SPP20N60S5XKSA1	Infineon Technologies	HIGH POWERLEGACY	Not For New Designs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRFP1405	Infineon Technologies	MOSFET N-CH 55V 95A TO-247AC	Active	N-Channel	MOSFET (Metal Oxide)	55V	95A (Tc)	10V	5.3 mOhm @ 95A, 10V	4V @ 250µA	180nC @ 10V	±20V	5600pF @ 25V	-	310W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-247AC	TO-247-3
SPA20N65C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 20.7A TO-220	Active	N-Channel	MOSFET (Metal Oxide)	650V	20.7A (Tc)	10V	190 mOhm @ 13.1A, 10V	3.9V @ 1mA	114nC @ 10V	±20V	2400pF @ 25V	-	34.5W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3 Full Pack
IPA60R099C7XKSA1	Infineon Technologies	MOSFET N-CH 600V TO220-3	Active	N-Channel	MOSFET (Metal Oxide)	600V	12A (Tc)	10V	99 mOhm @ 9.7A, 10V	4V @ 490µA	42nC @ 10V	±20V	1819pF @ 400V	-	33W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AUIRFS4115-7P	Infineon Technologies	MOSFET N-CH 150V 105A AUTO	Active	N-Channel	MOSFET (Metal Oxide)	150V	105A (Tc)	10V	11.8 mOhm @ 63A, 10V	5V @ 250µA	110nC @ 10V	±20V	5320pF @ 50V	-	380W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	D2PAK (7-Lead)	TO-263-7, D²Pak (6 Leads + Tab)
IPC60R099CPX1SA2	Infineon Technologies	MOSFET N-CH BARE DIE	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPC302N20N3X1SA1	Infineon Technologies	MOSFET N-CH 200V 1A SAWN ON FOIL	Active	N-Channel	MOSFET (Metal Oxide)	200V	1A (Tj)	10V	100 mOhm @ 2A, 10V	4V @ 260µA	-	-	-	-	-	-	Surface Mount	Sawn on foil	Die
IRFPS3815PBF	Infineon Technologies	MOSFET N-CH 150V 105A SUPER247	Active	N-Channel	MOSFET (Metal Oxide)	150V	105A (Tc)	10V	15 mOhm @ 63A, 10V	5V @ 250µA	390nC @ 10V	±30V	6810pF @ 25V	-	441W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	SUPER-247 (TO-274AA)	TO-274AA
IPC60R099C6X1SA1	Infineon Technologies	MOSFET N-CH BARE DIE	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPA030N10N3GXKSA1	Infineon Technologies	MOSFET N-CH 100V 79A TO220-FP	Active	N-Channel	MOSFET (Metal Oxide)	100V	79A (Tc)	6V, 10V	3 mOhm @ 79A, 10V	3.5V @ 270µA	206nC @ 10V	±20V	14800pF @ 50V	-	41W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
AUIRF3805L-7P	Infineon Technologies	MOSFET N-CH 55V 160A TO262-7	Active	N-Channel	MOSFET (Metal Oxide)	55V	160A (Tc)	10V	2.6 mOhm @ 140A, 10V	4V @ 250µA	200nC @ 10V	±20V	7820pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262	TO-262-7
SPW15N60CFDFKSA1	Infineon Technologies	MOSFET N-CH 650V 13.4A TO-247	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	650V	13.4A (Tc)	10V	330 mOhm @ 9.4A, 10V	5V @ 750µA	84nC @ 10V	±20V	1820pF @ 25V	-	156W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPA65R095C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO220-3	Active	N-Channel	MOSFET (Metal Oxide)	650V	12A (Tc)	10V	95 mOhm @ 11.8A, 10V	4V @ 590µA	45nC @ 10V	±20V	2140pF @ 400V	-	34W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220-FP	TO-220-3 Full Pack
IPC302N25N3X1SA1	Infineon Technologies	MOSFET N-CH 250V 1A SAWN ON FOIL	Active	N-Channel	MOSFET (Metal Oxide)	250V	1A (Tj)	10V	100 mOhm @ 2A, 10V	4V @ 270µA	-	-	-	-	-	-	Surface Mount	Sawn on foil	Die
SPP24N60C3XKSA1	Infineon Technologies	MOSFET N-CH 650V 24.3A TO-220	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	650V	24.3A (Tc)	10V	160 mOhm @ 15.4A, 10V	3.9V @ 1.2mA	135nC @ 10V	±20V	3000pF @ 25V	-	240W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3	TO-220-3
AUIRF2804WL	Infineon Technologies	MOSFET N-CH 40V 295A TO262WL	Active	N-Channel	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	1.8 mOhm @ 187A, 10V	4V @ 250µA	225nC @ 10V	±20V	7978pF @ 25V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Through Hole	TO-262-3 Wide	TO-262-3 Wide Leads
IPW60R120C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 19A TO247-3	Active	N-Channel	MOSFET (Metal Oxide)	600V	19A (Tc)	10V	120 mOhm @ 7.8A, 10V	4V @ 390µA	34nC @ 10V	±20V	1500pF @ 400V	-	92W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPC302N20NFDX1SA1	Infineon Technologies	MOSFET N-CH 200V 1A SAWN ON FOIL	Active	N-Channel	MOSFET (Metal Oxide)	200V	1A (Tj)	10V	100 mOhm @ 2A, 10V	4V @ 270µA	-	-	-	-	-	-	Surface Mount	Sawn on foil	Die
IPB156N22NFDATMA1	Infineon Technologies	MOSFET N-CH 220V TO263-3	Active	N-Channel	MOSFET (Metal Oxide)	220V	72A (Tc)	10V	15.6 mOhm @ 50A, 10V	4V @ 270µA	87nC @ 10V	±20V	6930pF @ 110V	-	300W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-3	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IPT043N15N5ATMA1	Infineon Technologies	MV POWER MOS	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPI65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO262	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	110 mOhm @ 12.7A, 10V	4.5V @ 1.3mA	118nC @ 10V	±20V	3240pF @ 100V	-	277.8W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
IPA65R110CFDXKSA1	Infineon Technologies	MOSFET N-CH 650V 31.2A TO220	Active	N-Channel	MOSFET (Metal Oxide)	650V	31.2A (Tc)	10V	110 mOhm @ 12.7A, 10V	4.5V @ 1.3mA	118nC @ 10V	±20V	3240pF @ 100V	-	34.7W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO220 Full Pack	TO-220-3 Full Pack
IPP04CN10NGXKSA1	Infineon Technologies	MV POWER MOS	Not For New Designs	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPW65R125C7XKSA1	Infineon Technologies	MOSFET N-CH 650V TO247	Active	N-Channel	MOSFET (Metal Oxide)	650V	18A (Tc)	10V	125 mOhm @ 8.9A, 10V	4V @ 440µA	35nC @ 10V	±20V	1670pF @ 400V	-	101W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPC302N25N3AX1SA1	Infineon Technologies	MOSFET N-CH 250V 1A SAWN ON FOIL	Active	N-Channel	MOSFET (Metal Oxide)	250V	1A (Tj)	10V	100 mOhm @ 2A, 10V	4V @ 270µA	-	-	-	-	-	-	Surface Mount	Sawn on foil	Die
IPW60R199CPFKSA1	Infineon Technologies	MOSFET N-CH 600V 16A TO-247	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600V	16A (Tc)	10V	199 mOhm @ 9.9A, 10V	3.5V @ 660µA	43nC @ 10V	±20V	1520pF @ 100V	-	139W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPW65R190CFDAFKSA1	Infineon Technologies	MOSFET N-CH 650V 17.5A TO247	Active	N-Channel	MOSFET (Metal Oxide)	650V	17.5A (Tc)	10V	190 mOhm @ 7.3A, 10V	4.5V @ 700µA	68nC @ 10V	±20V	1850pF @ 100V	-	151W (Tc)	-40°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IPI90R340C3XKSA1	Infineon Technologies	MOSFET N-CH 900V 15A TO-262	Active	N-Channel	MOSFET (Metal Oxide)	900V	15A (Tc)	10V	340 mOhm @ 9.2A, 10V	3.5V @ 1mA	94nC @ 10V	±20V	2400pF @ 100V	-	208W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO262-3	TO-262-3 Long Leads, I²Pak, TO-262AA
SIPC46N60C3X1SA1	Infineon Technologies	TRANSISTOR N-CH	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPZ60R125P6FKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-4	Last Time Buy	N-Channel	MOSFET (Metal Oxide)	600V	37.9A (Tc)	10V	99 mOhm @ 14.5A, 10V	4.5V @ 1.21mA	70nC @ 10V	±20V	3330pF @ 100V	-	219W (Tc)	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-4	TO-247-4
IPI051N15N5AKSA1	Infineon Technologies	MV POWER MOS	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPL60R065C7AUMA1	Infineon Technologies	MOSFET HIGH POWERNEW	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
AUIRF3004WL	Infineon Technologies	MOSFET N-CH 40V 240A D2PAK	Active	N-Channel	MOSFET (Metal Oxide)	40V	240A (Tc)	10V	1.4 mOhm @ 195A, 10V	4V @ 250µA	210nC @ 10V	±20V	9450pF @ 32V	-	375W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	TO-262-3 Wide	TO-262-3 Wide Leads
IPB60R099CPAATMA1	Infineon Technologies	MOSFET N-CH 600V 31A TO263-3	Not For New Designs	N-Channel	MOSFET (Metal Oxide)	600V	31A (Tc)	10V	105 mOhm @ 18A, 10V	3.5V @ 1.2mA	80nC @ 10V	±20V	2800pF @ 100V	-	255W (Tc)	-40°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Fabricants pour Transistors - FET, MOSFET - Simples