Número de pieza Fabricante / Marca Breve descripción Estado de la piezaConfiguración ImpulsadaTipo de canalCantidad de controladoresTipo de puertaSuministro de voltajeVoltaje lógico - VIL, VIHActual - Salida máxima (Fuente, Sumidero)Tipo de entradaAlto voltaje lateral - Máx. (Bootstrap)Tiempo de subida / bajada (Tipo)Temperatura de funcionamientoTipo de montajePaquete / cajaPaquete de dispositivo del proveedor
Texas Instruments IC QUAD MOSFET DRIVER 16-DIP ActiveLow-SideIndependent4N-Channel MOSFET4.75 V ~ 28 V0.8V, 2V500mA, 500mAInverting
-
20ns, 20ns0°C ~ 150°C (TJ)Through Hole16-DIP (0.300", 7.62mm)16-PDIP
Texas Instruments IC COMPLEMENT SW FET DRVR 8-SOIC ActiveLow-SideSynchronous2N-Channel, P-Channel MOSFET7 V ~ 20 V0.8V, 2V500mA, 1ANon-Inverting
-
30ns, 25ns0°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Texas Instruments IC COMPLEMNT SW FET DRVR 16-SOIC ObsoleteLow-SideSynchronous2N-Channel, P-Channel MOSFET7 V ~ 20 V0.8V, 2V500mA, 1ANon-Inverting
-
30ns, 25ns0°C ~ 150°C (TJ)Surface Mount16-SOIC (0.154", 3.90mm Width)16-SOIC
Texas Instruments IC COMPLEMENT SW FET DRVR 8-SOIC ActiveLow-SideSynchronous2N-Channel, P-Channel MOSFET7 V ~ 20 V0.8V, 2V500mA, 1ANon-Inverting
-
30ns, 25ns0°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Texas Instruments IC COMPLEMENT SW FET DRVR 8-DIP ObsoleteLow-SideSynchronous2N-Channel, P-Channel MOSFET7 V ~ 20 V0.8V, 2V500mA, 1ANon-Inverting
-
30ns, 25ns0°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Texas Instruments IC COMPLEMENT SW FET DRVR 8-DIP ObsoleteLow-SideSynchronous2N-Channel, P-Channel MOSFET7 V ~ 20 V0.8V, 2V500mA, 1ANon-Inverting
-
30ns, 25ns0°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
  1. 1
  2. 2
  3. 3