Número de pieza Fabricante / Marca Breve descripción Estado de la piezaTipo de memoriaFormato de memoriaTecnologíaTamaño de la memoriaFrecuencia de relojEscribir tiempo de ciclo - Palabra, páginaTiempo de accesointerfaz de memoriaSuministro de voltajeTemperatura de funcionamientoTipo de montajePaquete / cajaPaquete de dispositivo del proveedor
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)200MHz15ns700psParallel2.3 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)200MHz15ns700psParallel2.5 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)200MHz15ns700psParallel2.5 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512M (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (32M x 16)166MHz15ns700psParallel2.3 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
ISSI, Integrated Silicon Solution Inc IC DRAM 512M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR512Mb (64M x 8)200MHz15ns700psParallel2.5 V ~ 2.7 V-40°C ~ 85°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)
Winbond Electronics IC DRAM 256M PARALLEL 60TFBGA ActiveVolatileDRAMSDRAM - DDR256Mb (16M x 16)200MHz15ns55nsParallel2.3 V ~ 2.7 V0°C ~ 70°C (TA)Surface Mount60-TFBGA60-TFBGA (8x13)