Part Number Manufacturer / Brand Brife Description Part StatusDiode TypeVoltage - DC Reverse (Vr) (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfSpeedReverse Recovery Time (trr)Current - Reverse Leakage @ VrCapacitance @ Vr, FMounting TypePackage / CaseSupplier Device PackageOperating Temperature - Junction
Sanken DIODE GEN PURP 600V 800MA AXIAL ActiveStandard600V800mA1.3V @ 800mAFast Recovery =< 500ns, > 200mA (Io)400ns10µA @ 600V
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Through HoleAxialAxial-40°C ~ 150°C
Panasonic Electronic Components DIODE GEN PURP 300V 100MA SMINI3 ActiveStandard300V100mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed60ns1µA @ 300V3pF @ 6V, 1MHzSurface MountSC-85SMini3-F2-B150°C (Max)
SMC Diode Solutions DIODE SCHOTTKY 150V SMC ActiveSchottky150V
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860mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 150V110pF @ 5V, 1MHzSurface MountDO-214AB, SMCSMC-55°C ~ 175°C
Micro Commercial Co 3A600V SUPER FAST RECOVERY REC ActiveStandard600V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V
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Surface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Comchip Technology DIODE SCHOTTKY 40V 3A DO214AB ActiveSchottky40V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 40V250pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-50°C ~ 150°C
AVX Corporation DIODE SCHOTTKY 40V 100MA 0805 ActiveSchottky40V100mA (DC)500mV @ 100mASmall Signal =< 200mA (Io), Any Speed
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30µA @ 40V
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Surface Mount0805 (2012 Metric)0805 (2012 Metric)-55°C ~ 125°C
Diodes Incorporated DIODE GEN PURP 200V 3A SMC ActiveStandard200V3A1.3V @ 3AFast Recovery =< 500ns, > 200mA (Io)150ns5µA @ 200V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCSMC-65°C ~ 150°C
Sanken DIODE GEN PURP 200V 500MA AXIAL ActiveStandard200V500mA1.7V @ 500mAFast Recovery =< 500ns, > 200mA (Io)400ns10µA @ 200V
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Through HoleAxial
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-40°C ~ 150°C
SMC Diode Solutions DIODE GEN PURP 600V DPAK ActiveStandard600V
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1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns8µA @ 600V
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Surface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-55°C ~ 150°C
Panasonic Electronic Components DIODE SCHOTTKY 30V 3A TMINIP2 ActiveSchottky30V3A (DC)450mV @ 3AFast Recovery =< 500ns, > 200mA (Io)23ns300µA @ 30V74pF @ 10V, 1MHzSurface MountSOD-128TMiniP2-F2-B150°C (Max)
SMC Diode Solutions DIODE SCHOTTKY 100V DPAK ActiveSchottky100V
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900mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 100V250pF @ 5V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-55°C ~ 150°C
Sanken DIODE GEN PURP 600V 500MA AXIAL ActiveStandard600V500mA1.7V @ 500mAFast Recovery =< 500ns, > 200mA (Io)400ns10µA @ 600V
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Through HoleAxialAxial-40°C ~ 150°C
Sanken DIODE GEN PURP 1KV 200MA AXIAL ActiveStandard1000V200mA4V @ 200mASmall Signal =< 200mA (Io), Any Speed200ns100µA @ 1000V
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Through HoleAxial
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-40°C ~ 150°C
Diodes Incorporated DIODE SCHOTTKY 30V 1A POWERDI323 ActiveSchottky30V1A450mV @ 700mAFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V40pF @ 10V, 1MHzSurface MountPowerDI™ 323PowerDI™ 323-55°C ~ 150°C
Diodes Incorporated DIODE SCHOTTKY 150V POWERDI123 ActiveSchottky150V1A820mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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2µA @ 150V28pF @ 5V, 1MHzSurface MountPOWERDI®123PowerDI™ 123-55°C ~ 175°C
Micro Commercial Co DIODE SCHOTTKY 20V 3A DO214AA ActiveSchottky20V3A500mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 20V
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Surface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
STMicroelectronics DIODE SCHOTTKY 100V 2A DO41 ActiveSchottky100V2A860mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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1µA @ 100V
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Through HoleDO-204AL, DO-41, AxialDO-41175°C (Max)
Sanken DIODE GEN PURP 600V 600MA AXIAL ActiveStandard600V600mA2V @ 600mAFast Recovery =< 500ns, > 200mA (Io)100ns100µA @ 600V
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Through HoleAxial
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-40°C ~ 150°C
SMC Diode Solutions DIODE SCHOTTKY 45V DPAK ActiveSchottky45V
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700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
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1mA @ 45V400pF @ 5V, 1MHzSurface MountTO-252-3, DPak (2 Leads + Tab), SC-63DPAK-55°C ~ 150°C
Sanken DIODE GEN PURP 400V 700MA AXIAL ActiveStandard400V700mA2V @ 700mAFast Recovery =< 500ns, > 200mA (Io)100ns50µA @ 400V
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Through HoleAxial
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-40°C ~ 150°C
Sanken DIODE GEN PURP 800V 1.2A AXIAL ActiveStandard800V1.2A920mV @ 1.2AStandard Recovery >500ns, > 200mA (Io)18µs10µA @ 800V
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Through HoleAxialAxial-40°C ~ 150°C
Diodes Incorporated DIODE SCHOTTKY 30V 2A POWERDI323 ActiveSchottky30V2A600mV @ 2AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V40pF @ 10V, 1MHzSurface MountPowerDI™ 323PowerDI™ 323-55°C ~ 150°C
Sanken DIODE GEN PURP 600V 1A AXIAL ActiveStandard600V1A1.4V @ 1AFast Recovery =< 500ns, > 200mA (Io)400ns10µA @ 600V
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Through HoleAxial
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-40°C ~ 150°C
Sanken DIODE SCHOTTKY 30V 1A SJP ActiveSchottky30V1A450mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 30V
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Surface Mount2-SMD, J-LeadSJP-40°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 3A DO214AA ActiveStandard200V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 200V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 5A DO214AB Not For New DesignsStandard300V5A1V @ 5AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 300V80pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AA ActiveStandard600V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 600V50pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 300V 3A DO214AA ActiveStandard300V3A1V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 300V80pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Micro Commercial Co DIODE GEN PURP 600V 2A DO221AC ActiveStandard600V2A1.7V @ 1AFast Recovery =< 500ns, > 200mA (Io)75ns5µA @ 600V28pF @ 4V, 1MHzSurface MountDO-221AC, SMA Flat LeadsDO-221AC (SMA-FL)-65°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 5A DO214AA ActiveStandard400V5A1.1V @ 5AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 400V40pF @ 4V, 1MHzSurface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO214AB ActiveStandard600V5A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 600V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 5A DO214AB Not For New DesignsStandard600V5A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 600V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 5A DO214AB ActiveStandard200V5A1V @ 5AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 200V80pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 3A DO201AD ActiveStandard1000V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 1000V35pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 5A DO214AB ActiveStandard400V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V80pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Diodes Incorporated DIODE RECT SBR 45V 5A POWERDI5 ActiveSuper Barrier45V5A600mV @ 5AStandard Recovery >500ns, > 200mA (Io)
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280µA @ 45V
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Surface MountPowerDI™ 5PowerDI®5-55°C ~ 150°C
Diodes Incorporated DIODE RECT SBR 45V 5A POWERDI5 ActiveSuper Barrier45V5A600mV @ 5AStandard Recovery >500ns, > 200mA (Io)
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280µA @ 45V
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Surface MountPowerDI™ 5PowerDI®5-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 3A DO214AB Not For New DesignsStandard400V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 400V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Rohm Semiconductor DIODE SCHOTTKY 150V 1A PMDS Not For New DesignsSchottky150V1A840mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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4µA @ 150V
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Surface MountDO-214AC, SMAPMDS150°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 400V 5A DO214AB Not For New DesignsStandard400V5A1.3V @ 5AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 400V80pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Micro Commercial Co DIODE GEN PURP 1KV 3A DO201AD ObsoleteStandard1000V3A1.7V @ 3AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 1000V50pF @ 4V, 1MHzThrough HoleDO-201AD, AxialDO-201AD-55°C ~ 150°C
Diodes Incorporated DIODE SBR 20V 500MA 2DFN ActiveSuper Barrier20V500mA500mV @ 500mAFast Recovery =< 500ns, > 200mA (Io)
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50µA @ 20V
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Surface Mount0402 (1006 Metric)2-DFN1006-65°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 800V 3A DO214AB Not For New DesignsStandard800V3A1.15V @ 3AFast Recovery =< 500ns, > 200mA (Io)
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10µA @ 800V60pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C
Rohm Semiconductor AUTOMOTIVE FAST RECOVERY DIODE ActiveStandard700V800mA1.5V @ 800mAFast Recovery =< 500ns, > 200mA (Io)80ns1µA @ 700V
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Surface MountSOD-128PMDTM150°C (Max)
Rohm Semiconductor DIODE SCHOTTKY 90V 1A PMDU ActiveSchottky90V1A730mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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100µA @ 90V
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Surface MountSOD-123FPMDU150°C (Max)
Rohm Semiconductor SCHOTTKY BARRIER DIODE ActiveSchottky100V1A840mV @ 1AFast Recovery =< 500ns, > 200mA (Io)
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300nA @ 100V
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Surface Mount2-SMD, Flat LeadTUMD2M150°C (Max)
ON Semiconductor DIODE GEN PURP 400V 1.5A SMB ActiveStandard400V1.5A1.04V @ 1.5AStandard Recovery >500ns, > 200mA (Io)
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1µA @ 400V
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Surface MountDO-214AA, SMBSMB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 3A DO214AB Not For New DesignsStandard600V3A1.25V @ 3AFast Recovery =< 500ns, > 200mA (Io)50ns10µA @ 600V
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Surface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 3A DO214AA ActiveSchottky60V3A750mV @ 3AFast Recovery =< 500ns, > 200mA (Io)
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500µA @ 60V
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Surface MountDO-214AA, SMBDO-214AA (SMB)-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 1KV 5A DO214AB Not For New DesignsStandard1000V5A1.7V @ 5AFast Recovery =< 500ns, > 200mA (Io)75ns10µA @ 1000V50pF @ 4V, 1MHzSurface MountDO-214AB, SMCDO-214AB (SMC)-55°C ~ 150°C