Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusAngetriebene KonfigurationKanaltypAnzahl der TreiberTortypSpannungsversorgungLogikspannung - VIL, VIHAktuell - Spitzenleistung (Quelle, Senke)EingabetypHohe Seitenspannung - Max (Bootstrap)Anstiegs- / Abfallzeit (Typ)BetriebstemperaturBefestigungsartPaket / FallLieferantengerätepaket
Infineon Technologies IC DRIVER HALF-BRIDGE 8-DIP ObsoleteHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF-BRIDGE 8-DIP ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Through Hole8-DIP (0.300", 7.62mm)8-PDIP
Infineon Technologies IC DRIVER HALF BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC DVR HALF BRIDGE 8-SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC
Infineon Technologies IC HALF BRIDGE DRIVER 8SOIC ActiveHalf-BridgeIndependent2IGBT, N-Channel MOSFET10 V ~ 20 V0.8V, 2.3V60mA, 130mANon-Inverting600V200ns, 100ns-40°C ~ 150°C (TJ)Surface Mount8-SOIC (0.154", 3.90mm Width)8-SOIC