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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8-SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS |
IC MOSFET DRIVER DUAL 2A 8-SOIC |
Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8SOIC EXP MTL DUAL IN/NON-INV |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL IN/NON 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DIFF 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting, Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS |
IC MOSFET DRVR DUAL 2A 8-DIP |
Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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IXYS |
IC MOSFET DRVR DUAL 2A 8-SOIC |
Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS |
IC MOSF DRVR FAST DUAL INV 8SOIC |
Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8 DFN DUAL INVERTING |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-EP (5x4) |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-SO |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A INV 8-SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS |
IC MOSFET DRVR DUAL 2A 8-SOIC |
Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 8ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS |
IC MOSF DRIVER FAST DUAL 8-DIP |
Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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IXYS |
IC GATE DRIVER DUAL 4A 8-SOIC |
Obsolete | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 30 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
MOSFET N-CH 2A DUAL LO SIDE 8-DI |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
DUAL LOW SIDE MOSFET DRIVER |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
2A 8 LEAD SOIC DUAL NON INVERTIN |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8DIP |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL NONINV 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 4A DUAL HS 8SOIC |
Active | Low-Side | Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 4A, 4A | Non-Inverting | - | 9ns, 8ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8DIP |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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IXYS Integrated Circuits Division |
IC GATE DVR 9A NON-INV 8SOIC |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 22ns, 15ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
14A 8 PIN DIP NON INVERTING |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
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IXYS Integrated Circuits Division |
14A 8SOIC EXP MTL NON INVERTING |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
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IXYS Integrated Circuits Division |
14A 5LEAD TO-263 NON INVERTING |
Active | Low-Side | Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 14A, 14A | Non-Inverting | - | 25ns, 18ns | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-6, D²Pak (5 Leads + Tab), TO-263BA | TO-263-5 |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-DIP |
Obsolete | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
Active | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
Discontinued at - | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-DIP |
Obsolete | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-SOIC |
Active | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC DRIVER MOSFET 9A LS 8-DIP |
Active | Low-Side | Single | 1 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 3V | 9A, 9A | Non-Inverting | - | 20ns, 24ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Non-Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8SOIC |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Non-Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
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Microchip Technology |
IC MOSFET DVR 1.2A DUAL HS 8DIP |
Active | Low-Side | Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 3V | 1.2A, 1.2A | Non-Inverting | - | 35ns, 25ns | 0°C ~ 70°C (TA) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
