Dioden - Gleichrichter - Einzeln - Diskrete Halbleiterprodukte - 1N4534UR 1N4944 1N5181 1N5182 - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Dioden-Typ	Spannung - DC Reverse (Vr) (Max)	Strom - Durchschnittlich gleichgerichtet (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Wiederherstellungszeit (trr)	Strom - Rückwärtsleckage @ Vr	Kapazität @ Vr, F	Befestigungsart	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Kreuzung
1N4534UR	Microsemi Corporation	DIODE SWITCHING	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N4944	Microsemi Corporation	DIODE GEN PURP 400V 1A AXIAL	Discontinued at -	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5181	Microsemi Corporation	DIODE GEN PURP 4KV 100MA AXIAL	Discontinued at -	Standard	4000V	100mA	10V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 4000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
1N5182	Microsemi Corporation	DIODE GEN PURP 5KV 100MA AXIAL	Discontinued at -	Standard	5000V	100mA	10V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 5000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
1N5184	Microsemi Corporation	DIODE GEN PURP 10KV 100MA SAXIAL	Discontinued at -	Standard	10000V	100mA	10V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 10000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
1N5188	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Discontinued at -	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	2µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5415US	Microsemi Corporation	DIODE GEN PURP 50V 3A D5B	Discontinued at -	Standard	50V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 50V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
1N5803	Microsemi Corporation	DIODE GEN PURP 75V 1A AXIAL	Discontinued at -	Standard	75V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 75V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5805	Microsemi Corporation	DIODE GEN PURP 125V 1A AXIAL	Discontinued at -	Standard	125V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 125V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 125°C
1N5820US	Microsemi Corporation	DIODE SCHOTTKY 20V 3A B-MELF	Discontinued at -	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
1N5821US	Microsemi Corporation	DIODE SCHOTTKY 30V 3A B-MELF	Discontinued at -	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
1N6080US	Microsemi Corporation	DIODE GEN PURP 100V 2A G-MELF	Discontinued at -	Standard	100V	2A	1.5V @ 37.7A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 100V	-	Surface Mount	SQ-MELF, G	G-MELF (D-5C)	-65°C ~ 155°C
1N645UR-1	Microsemi Corporation	DIODE GEN PURP 225V 400MA DO213	Discontinued at -	Standard	225V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 225V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N646-1	Microsemi Corporation	DIODE GEN PURP 300V 400MA DO35	Discontinued at -	Standard	300V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 300V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N648-1	Microsemi Corporation	DIODE GEN PURP 500V 400MA DO35	Discontinued at -	Standard	500V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 500V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
1N6624US	Microsemi Corporation	DIODE GEN PURP 990V 1A A-MELF	Discontinued at -	Standard	990V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 990V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N6629US	Microsemi Corporation	DIODE GEN PURP 880V 1.4A A-MELF	Discontinued at -	Standard	880V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 880V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N6631	Microsemi Corporation	DIODE GEN PURP 1.1KV 1.4A AXIAL	Discontinued at -	Standard	1100V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	4µA @ 1100V	40pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 150°C
1N6642U	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5D	Active	Standard	75V	300mA	800mV @ 10mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	500µA @ 75V	-	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
1N6676	Microsemi Corporation	DIODE SCHOTTKY 30V 200MA DO35	Obsolete	Schottky	30V	200mA	500mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	50pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
1N6700	Microsemi Corporation	DIODE SCHOTTKY	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6701	Microsemi Corporation	DIODE SCHOTTKY	Active	-	-	-	-	-	-	-	-	-	-	-	-
DSB0.5A20	Microsemi Corporation	DIODE SCHOTTKY 20V 500MA DO35	Active	Schottky	20V	500mA	650mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 20V	60pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C
DSB1A100	Microsemi Corporation	DIODE SCHOTTKY 100V 1A DO204AL	Active	Schottky	100V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB1A20	Microsemi Corporation	DIODE SCHOTTKY 20V 1A DO204AL	Active	Schottky	20V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB1A30	Microsemi Corporation	DIODE SCHOTTKY 30V 1A DO204AL	Active	Schottky	30V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB1A40	Microsemi Corporation	DIODE SCHOTTKY 40V 1A DO204AL	Active	Schottky	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB1A50	Microsemi Corporation	DIODE SCHOTTKY 50V 1A DO204AL	Active	Schottky	50V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB1A60	Microsemi Corporation	DIODE SCHOTTKY 60V 1A DO204AL	Active	Schottky	60V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB1A80	Microsemi Corporation	DIODE SCHOTTKY 80V 1A DO204AL	Active	Schottky	80V	1A	690mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 80V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB2810	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO35	Active	Schottky	20V	75mA	410mV @ 1mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 15V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
DSB3A20	Microsemi Corporation	DIODE SCHOTTKY 20V 3A DO204AH	Active	Schottky	20V	3A	500mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 125°C
DSB3A30	Microsemi Corporation	DIODE SCHOTTKY 30V 3A DO204AH	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 125°C
DSB3A40	Microsemi Corporation	DIODE SCHOTTKY 40V 3A DO204AH	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 125°C
DSB5712	Microsemi Corporation	DIODE SCHOTTKY 20V 75MA DO35	Active	Schottky	20V	75mA	1V @ 35mA	Small Signal =< 200mA (Io), Any Speed	-	150µA @ 16V	2pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
DSB5817	Microsemi Corporation	DIODE SCHOTTKY DO-41	Active	-	-	-	-	-	-	-	-	-	-	-	-
DSB5818	Microsemi Corporation	DIODE SCHOTTKY 30V 1A DO204AL	Active	Schottky	30V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100nA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
DSB5820	Microsemi Corporation	DIODE SCHOTTKY 20V 3A DO204AH	Active	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	-	-65°C ~ 125°C
DSB5821	Microsemi Corporation	DIODE SCHOTTKY 30V 3A DO204AH	Active	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	-	-65°C ~ 125°C
DSB5822	Microsemi Corporation	DIODE SCHOTTKY 40V 3A DO204AH	Active	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	-	-65°C ~ 125°C
LSM140 MELF	Microsemi Corporation	DIODE SCHOTTKY 40V 1A DO213AB	Active	Schottky	40V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	-	Surface Mount	DO-213AB, MELF	DO-213AB	-65°C ~ 150°C
JANS1N6638	Microsemi Corporation	DIODE GEN PURP 125V 300MA DO204	Discontinued at -	Standard	125V	300mA	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	4.5ns	500nA @ 125V	2.5pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	-	-65°C ~ 175°C
CDBZ61045-HF	Comchip Technology	DIODE SCHOTTKY 45V 10A TO252	Obsolete	Schottky	45V	10A	550mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	Z6	TO-252 (Z6)	-55°C ~ 150°C
AK 04	Sanken	DIODE SCHOTTKY 40V 1A AXIAL	Obsolete	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
AK 06	Sanken	DIODE SCHOTTKY 60V 700MA AXIAL	Obsolete	Schottky	60V	700mA	620mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	Axial	-	-40°C ~ 150°C
AK 09	Sanken	DIODE SCHOTTKY 90V 700MA AXIAL	Obsolete	Schottky	90V	700mA	810mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 90V	-	Through Hole	Axial	-	-40°C ~ 150°C
AL01	Sanken	DIODE GEN PURP 400V 1A AXIAL	Obsolete	Standard	400V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 400V	-	Through Hole	Axial	-	-40°C ~ 150°C
AL01Z	Sanken	DIODE GEN PURP 200V 1A AXIAL	Obsolete	Standard	200V	1A	980mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
EK 04	Sanken	DIODE SCHOTTKY 40V 1A AXIAL	Obsolete	Schottky	40V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 40V	-	Through Hole	Axial	-	-40°C ~ 150°C
EK 06	Sanken	DIODE SCHOTTKY 60V 700MA AXIAL	Obsolete	Schottky	60V	700mA	620mV @ 700mA	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	Axial	-	-40°C ~ 150°C

Hersteller für Dioden - Gleichrichter - Einzeln