Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusDioden-TypSpannung - DC Reverse (Vr) (Max)Strom - Durchschnittlich gleichgerichtet (Io)Spannung - Vorwärts (Vf) (Max) @ IfGeschwindigkeitReverse Wiederherstellungszeit (trr)Strom - Rückwärtsleckage @ VrKapazität @ Vr, FBefestigungsartPaket / FallLieferantengerätepaketBetriebstemperatur - Kreuzung
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 10A TO220AB ActiveSchottky120V10A930mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 120V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 10A TO220AB ActiveSchottky200V10A990mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO220AB ActiveSchottky60V10A650mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
SMC Diode Solutions DIODE SCHOTTKY 150V 15A DIE ActiveSchottky150V15A890mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 150V500pF @ 5V, 1MHzSurface MountDieDie200°C (Max)
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V60pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 10A TO220-2 ActiveStandard600V10A1.3V @ 10AFast Recovery =< 500ns, > 200mA (Io)150ns100µA @ 600V
-
Through HoleTO-220-2
-
150°C (Max)
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 15A TO220AB ActiveSchottky120V15A880mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 120V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 15A TO220AB ActiveSchottky200V15A960mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 15A TO220AB ActiveSchottky100V15A820mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 8A TO220-2L ActiveStandard600V8A2.6V @ 8AFast Recovery =< 500ns, > 200mA (Io)30ns100µA @ 600V
-
Through HoleTO-220-2TO-220-2L-65°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 200V 16A ITO220AB ActiveStandard200V16A975mV @ 16AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 200V80pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 5A TO220AB ActiveSchottky120V5A790mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 120V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 5A TO220AB ActiveSchottky200V5A910mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 300V 15A TO262 ActiveStandard300V15A1.25V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns40µA @ 300V
-
Through HoleTO-262-3 Long Leads, I²Pak, TO-262AATO-262AA-65°C ~ 175°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 300V 15A TO263AB ActiveStandard300V15A1.25V @ 15AFast Recovery =< 500ns, > 200mA (Io)40ns40µA @ 300V
-
Surface MountTO-263-3, D²Pak (2 Leads + Tab), TO-263ABTO-263AB (D²PAK)-65°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 5A TO220AB ActiveSchottky100V5A700mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 5A TO220AB ActiveSchottky150V5A880mV @ 5AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 10A ITO220AB ActiveStandard600V10A1.7V @ 10AFast Recovery =< 500ns, > 200mA (Io)35ns10µA @ 600V50pF @ 4V, 1MHzThrough HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 8A TO220-2 ActiveStandard600V8A3.2V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns30µA @ 600V
-
Through HoleTO-220-2TO-220-2-55°C ~ 150°C
ON Semiconductor DIODE GEN PURP 600V 8A TO220-2 ActiveStandard600V8A2.1V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns100µA @ 600V
-
Through HoleTO-220-2TO-220-2-65°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A TO220AC ActiveSchottky100V10A850mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Through HoleTO-220-2TO-220AC-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 20A TO220AB ActiveSchottky120V20A800mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 120V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 20A TO220AB ActiveSchottky100V20A750mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 20A TO220AB ActiveSchottky150V20A860mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE FRED 600V 15A TO220AC ActiveStandard600V15A1.05V @ 15AFast Recovery =< 500ns, > 200mA (Io)220ns10µA @ 600V
-
Through HoleTO-220-2TO-220AC-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 8A TO220AC Not For New DesignsStandard600V8A2.1V @ 8AFast Recovery =< 500ns, > 200mA (Io)35ns100µA @ 600V
-
Through HoleTO-220-2TO-220AC-65°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 20A ITO220AB ActiveSchottky60V20A700mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleTO-220-3 Full Pack, Isolated TabITO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 15A TO220AB ActiveSchottky60V15A600mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A TO220AB ActiveSchottky45V15A550mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 10A TO220AB ActiveSchottky45V10A510mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 10A TO220AB ActiveSchottky60V10A540mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE GEN PURP 8A TO220AC ActiveStandard
-
8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)80ns10µA @ 1000V55pF @ 4V, 1MHzThrough HoleTO-220-2TO-220AC-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 8A TO220-2 ActiveStandard600V8A2.65V @ 8AFast Recovery =< 500ns, > 200mA (Io)21ns12µA @ 600V
-
Through HoleTO-220-2 Full PackTO-220-2 Full Pack-65°C ~ 175°C
Taiwan Semiconductor Corporation DIODE GEN PURP 600V 8A TO220AC ActiveStandard600V8A1.7V @ 8AFast Recovery =< 500ns, > 200mA (Io)50ns5µA @ 600V
-
Through HoleTO-220-2TO-220AC-55°C ~ 175°C
SMC Diode Solutions DIODE SCHOTTKY 45V 15A DIE ActiveSchottky45V15A640mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 45V800pF @ 5V, 1MHzSurface MountDieDie175°C (Max)
SMC Diode Solutions DIODE SCHOTTKY 45V 15A DIE ActiveSchottky45V15A640mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 45V800pF @ 5V, 1MHzSurface MountDieDie-55°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 100V 10A TO220AB ActiveSchottky100V10A790mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 15A TO220AB ActiveSchottky60V15A570mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A TO220AB ActiveSchottky45V15A540mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 120V 10A TO220AB ActiveSchottky120V10A900mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 120V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Power Integrations DIODE GEN PURP 600V 6A TO220AC ActiveStandard600V6A2.94V @ 6AFast Recovery =< 500ns, > 200mA (Io)23ns250µA @ 600V
-
Through HoleTO-220-2TO-220AC150°C (Max)
STMicroelectronics DIODE GEN PURP 600V 15A TO220AC ActiveStandard600V15A2.95V @ 15AFast Recovery =< 500ns, > 200mA (Io)50ns20µA @ 600V
-
Through HoleTO-220-2TO-220AC-40°C ~ 175°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 150V 10A TO220AB ActiveSchottky150V10A900mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 200V 10A TO220AB ActiveSchottky200V10A930mV @ 10AFast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 15A TO220FP ActiveStandard600V15A2.45V @ 15AFast Recovery =< 500ns, > 200mA (Io)29ns15µA @ 600V
-
Through HoleTO-220-2 Full PackTO-220-2 Full Pack-65°C ~ 175°C
ON Semiconductor DIODE GEN PURP 600V 15A TO220FP ActiveStandard600V15A1.8V @ 15AFast Recovery =< 500ns, > 200mA (Io)45ns15µA @ 600V
-
Through HoleTO-220-2 Full PackTO-220FP-65°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 15A TO220AB ActiveSchottky45V15A550mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 60V 15A TO220AB ActiveSchottky60V15A580mV @ 15AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
Taiwan Semiconductor Corporation DIODE SCHOTTKY 45V 20A TO220AB ActiveSchottky45V20A590mV @ 20AFast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 45V
-
Through HoleTO-220-3TO-220AB-55°C ~ 150°C
SMC Diode Solutions DIODE SCHOTTKY 30V 30A DIE ActiveSchottky30V30A490mV @ 30AFast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 30V2200pF @ 5V, 1MHzSurface MountDieDie-55°C ~ 150°C