|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A MICRO SMA |
Active | Schottky | 40V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A MICRO SMA |
Active | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 40V | 50pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A MICRO SMA |
Active | Schottky | 30V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A MICRO SMA |
Active | Schottky | 30V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 50pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SOD123HE |
Active | Schottky | 150V | 1A | 850mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 150V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A MICRO SMA |
Active | Schottky | 20V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 20V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE |
Active | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE |
Active | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE |
Active | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE |
Active | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE |
Active | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 7pF @ 4V, 1MHz | Surface Mount | SOD-128 | SOD-128 | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A SUB SMA |
Active | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SUB SMA |
Active | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A SOD123W |
Active | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500nA @ 100V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A SOD123W |
Active | Schottky | 40V | 1A | 650mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500nA @ 40V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A DO204AL |
Active | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 2A DO214AC |
Active | Schottky | 60V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A DO214AC |
Active | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A MICRO SMA |
Active | Schottky | 30V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 30V | 50pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A MICRO SMA |
Active | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 40V | 50pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
Active | Standard | 200V | 1.5A | 1.4V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1.5A DO214AC |
Active | Standard | 400V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.5A DO214AC |
Active | Standard | 600V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1.5A DO214AC |
Active | Standard | 800V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1.5A DO214AC |
Active | Standard | 1000V | 1.5A | 1.3V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE AVALANCHE 1KV 1.5A DO214AC |
Active | Avalanche | 1000V | 1.5A | 1.6V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 1µA @ 1000V | 13pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SUB SMA |
Active | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
Active | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SUB SMA |
Active | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 2A MICRO SMA |
Active | Schottky | 30V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 2A MICRO SMA |
Active | Schottky | 20V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 20V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 2A SOD123W |
Active | Schottky | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 200V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 2A MICRO SMA |
Active | Schottky | 40V | 2A | 600mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 40V | 35pF @ 4V, 1MHz | Surface Mount | 2-SMD, Flat Lead | Micro SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 2A DO214AC |
Active | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A DO214AC |
Active | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO214AC |
Active | Schottky | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A SUB SMA |
Active | Standard | 100V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 2A DO204AC |
Active | Standard | 1000V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 150V 2A DO214AC |
Active | Standard | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 150V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO214AC |
Active | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 2A DO214AC |
Active | Standard | 400V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 400V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 2A DO214AC |
Active | Standard | 100V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 2A DO214AC |
Active | Standard | 300V | 2A | 1.3V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 300V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 3A SOD123HE |
Active | Schottky | 45V | 3A | 470mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 3A SOD123HE |
Active | Schottky | 60V | 3A | 580mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 60V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SUB SMA |
Active | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 400V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A SUB SMA |
Active | Standard | 200V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 1A SUB SMA |
Active | Standard | 300V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 300V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1.5A DO214AC |
Active | Standard | 50V | 1.5A | 1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1.5A DO214AC |
Active | Standard | 200V | 1.5A | 1V @ 1.5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |