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  4. Dioden - Gleichrichter - Einzeln
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Hersteller für Dioden - Gleichrichter - Einzeln

AVX Corporation
Bourns
Central Semiconductor
Comchip Technology
Sensata Technologies – Crydom
Diodes Incorporated
GeneSiC Semiconductor
Global Power Technologies Group, Inc.
Infineon Technologies
IXYS Corporation
Littelfuse
MACOM Technology Solutions
Micro Commercial Components (MCC)
Microsemi
Nexperia
NXP Semiconductors
ON Semiconductor
Panasonic
Phoenix Contact
Power Integrations
Powerex, Inc.
Renesas Electronics America
ROHM Semiconductor
Sanken Electric Co., Ltd.
Semtech
SMC Diode Solutions
Esterline Connection Technologies
STMicroelectronics
Taiwan Semiconductor
Texas Instruments
Torex Semiconductor
Toshiba Semiconductor and Storage
TT Electronics/Optek Technology
Vishay
WeEn Semiconductors Co., Ltd
Wolfspeed
Artikelnummer Hersteller / Marke Kurze Beschreibung TeilstatusDioden-TypSpannung - DC Reverse (Vr) (Max)Strom - Durchschnittlich gleichgerichtet (Io)Spannung - Vorwärts (Vf) (Max) @ IfGeschwindigkeitReverse Wiederherstellungszeit (trr)Strom - Rückwärtsleckage @ VrKapazität @ Vr, FBefestigungsartPaket / FallLieferantengerätepaketBetriebstemperatur - Kreuzung
1N1342
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JAN1N6642UB
 Microsemi Corporation DIODE GEN PURP 75V 300MA UB ActiveStandard75V300mA1.2V @ 100mAFast Recovery =< 500ns, > 200mA (Io)5ns500nA @ 75V5pF @ 0V, 1MHzSurface Mount3-SMD, No Lead3-UB (3.09x2.45)-65°C ~ 175°C
JANTX1N6077
 Microsemi Corporation DIODE GEN PURP 100V 1.3A AXIAL ActiveStandard100V1.3A1.76V @ 18.8AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 100V
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Through HoleA, AxialA-PAK-65°C ~ 155°C
JANTX1N6076
 Microsemi Corporation DIODE GEN PURP 50V 1.3A AXIAL ActiveStandard50V1.3A1.76V @ 18.8AFast Recovery =< 500ns, > 200mA (Io)30ns5µA @ 50V
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Through HoleA, AxialA-PAK-65°C ~ 155°C
JANTX1N6629
 Microsemi Corporation DIODE GEN PURP 880V 1.4A ActiveStandard880V1.4A1.4V @ 1.4AFast Recovery =< 500ns, > 200mA (Io)50ns2µA @ 880V40pF @ 10V, 1MHzThrough HoleE, Axial
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-65°C ~ 150°C
JANTX1N6625
 Microsemi Corporation DIODE GEN PURP 1.1KV 1A AXIAL ActiveStandard1100V1A1.75V @ 1AFast Recovery =< 500ns, > 200mA (Io)60ns500nA @ 1100V10pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 150°C
JANTX1N6622
 Microsemi Corporation DIODE GEN PURP 660V 2A AXIAL ActiveStandard660V2A1.4V @ 1.2AFast Recovery =< 500ns, > 200mA (Io)30ns500nA @ 660V10pF @ 10V, 1MHzThrough HoleA, Axial
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-65°C ~ 150°C
JANTXV1N6626
 Microsemi Corporation DIODE GEN PURP 220V 1.75A AXIAL ActiveStandard220V1.75A1.35V @ 2AFast Recovery =< 500ns, > 200mA (Io)30ns2µA @ 220V40pF @ 10V, 1MHzThrough HoleE, Axial
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-65°C ~ 150°C
1N1343B
 Microsemi Corporation DIODE GEN PURP 150V 16A DO203AA ActiveStandard150V16A1.3V @ 30AStandard Recovery >500ns, > 200mA (Io)
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10µA @ 150V
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Stud MountDO-203AA, DO-4, StudDO-203AA (DO-4)-65°C ~ 200°C
1N1345
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JANTX1N5802URS
 Microsemi Corporation DIODE GEN PURP 50V 1A APKG ActiveStandard50V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 50V25pF @ 10V, 1MHzSurface MountSQ-MELF, AA-MELF-65°C ~ 175°C
JANTX1N5804URS
 Microsemi Corporation DIODE GEN PURP 100V 1A APKG ActiveStandard100V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 100V25pF @ 10V, 1MHzSurface MountSQ-MELF, AA-MELF-65°C ~ 175°C
JANTX1N5806URS
 Microsemi Corporation DIODE GEN PURP 150V 1A APKG ActiveStandard150V1A875mV @ 1AFast Recovery =< 500ns, > 200mA (Io)25ns1µA @ 150V25pF @ 10V, 1MHzSurface MountSQ-MELF, AA-MELF-65°C ~ 175°C
JAN1N4148UB
 Microsemi Corporation DIODE GEN PURP 75V 200MA UB ActiveStandard75V200mA1.2V @ 100mASmall Signal =< 200mA (Io), Any Speed5ns75µA @ 75V4pF @ 0V, 1MHzSurface Mount3-SMD, No LeadUB-65°C ~ 200°C
JANTXV1N5417US
 Microsemi Corporation DIODE GEN PURP 200V 3A D5B ActiveStandard200V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 200V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N5418US
 Microsemi Corporation DIODE GEN PURP 400V 3A D5B ActiveStandard400V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)150ns1µA @ 400V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N5420US
 Microsemi Corporation DIODE GEN PURP 600V 3A D5B ActiveStandard600V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)400ns1µA @ 600V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
JANTXV1N5419US
 Microsemi Corporation DIODE GEN PURP 500V 3A B-MELF ActiveStandard500V3A1.5V @ 9AFast Recovery =< 500ns, > 200mA (Io)250ns1µA @ 500V
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Surface MountSQ-MELF, BD-5B-65°C ~ 175°C
S3510
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