Microsemi Distributor - Dioden - Gleichrichter - Einzeln - 1N6623US 1N6625US - CHIPSIC

Artikelnummer	Hersteller / Marke	Kurze Beschreibung	Teilstatus	Dioden-Typ	Spannung - DC Reverse (Vr) (Max)	Strom - Durchschnittlich gleichgerichtet (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Wiederherstellungszeit (trr)	Strom - Rückwärtsleckage @ Vr	Kapazität @ Vr, F	Befestigungsart	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Kreuzung
1N6623US	Microsemi Corporation	DIODE GEN PURP 880V 1A A-MELF	Active	Standard	880V	1A	1.55V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	500nA @ 880V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N6625US	Microsemi Corporation	DIODE GEN PURP 1.1KV 1A A-MELF	Active	Standard	1100V	1A	1.75V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	1µA @ 1100V	10pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N6626US	Microsemi Corporation	DIODE GEN PURP 220V 1.75A A-MELF	Active	Standard	220V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 220V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N6627US	Microsemi Corporation	DIODE GEN PURP 440V 1.75A A-MELF	Active	Standard	440V	1.75A	1.35V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	2µA @ 440V	40pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A-MELF	-65°C ~ 150°C
1N5552US	Microsemi Corporation	DIODE GEN PURP 600V 3A D5B	Active	Standard	600V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTXV1N5615	Microsemi Corporation	DIODE GEN PURP 200V 1A AXIAL	Active	Standard	200V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500nA @ 200V	45pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N5621	Microsemi Corporation	DIODE GEN PURP 800V 1A AXIAL	Active	Standard	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	20pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTXV1N6642	Microsemi Corporation	DIODE GEN PURP 100V 300MA	Active	Standard	100V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 100V	-	Through Hole	Axial	-	-65°C ~ 175°C
JANTXV1N6639	Microsemi Corporation	DIODE GEN PURP 75V 300MA AXIAL	Active	Standard	75V	300mA	1.2V @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	4ns	100nA @ 75V	-	Through Hole	D, Axial	D-Pak	-65°C ~ 175°C
JANTXV1N6641	Microsemi Corporation	DIODE GEN PURP 50V 300MA AXIAL	Active	Standard	50V	300mA	1.1V @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	100nA @ 50V	-	Through Hole	D, Axial	D-Pak	-65°C ~ 175°C
JANTXV1N6643	Microsemi Corporation	DIODE GEN PURP 75V 300MA AXIAL	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	5pF @ 0V, 1MHz	Through Hole	D, Axial	D-Pak	-65°C ~ 175°C
JANTX1N5811	Microsemi Corporation	DIODE GEN PURP 150V 3A AXIAL	Active	Standard	150V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 150V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5807	Microsemi Corporation	DIODE GEN PURP 50V 3A AXIAL	Active	Standard	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
JANTX1N5809	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 100V	60pF @ 10V, 1MHz	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N3595AUR-1	Microsemi Corporation	DIODE GP 125V 150MA DO213AA	Active	Standard	125V	150mA	920mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	3µs	2nA @ 125V	-	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
1N6858UR-1	Microsemi Corporation	SCHOTTKY RECTIFIER	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5420	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
JAN1N5554US	Microsemi Corporation	DIODE GEN PURP 1KV 5A D5B	Active	Standard	1000V	5A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 1000V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTX1N5802US	Microsemi Corporation	DIODE GEN PURP 50V 1A D5A	Active	Standard	50V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 50V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTX1N5804US	Microsemi Corporation	DIODE GEN PURP 100V 1A D5A	Active	Standard	100V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 100V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5416US	Microsemi Corporation	DIODE GEN PURP 100V 3A AXIAL	Active	Standard	100V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5417US	Microsemi Corporation	DIODE GEN PURP 200V 3A B-MELF	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
JAN1N5418US	Microsemi Corporation	DIODE GEN PURP 400V 3A D5B	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5419US	Microsemi Corporation	DIODE GEN PURP 500V 3A D5B	Active	Standard	500V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 500V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5420US	Microsemi Corporation	DIODE GEN PURP 600V 3A D5B	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	1µA @ 600V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTXV1N5417	Microsemi Corporation	DIODE GEN PURP 200V 3A AXIAL	Active	Standard	200V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N6536	Microsemi Corporation	DIODE GEN PURP 400V 1A A AXIAL	Active	Standard	400V	1A (DC)	1.5V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	10µA @ 400V	-	Through Hole	A, Axial	A, Axial	-
JANTX1N6642U	Microsemi Corporation	DIODE GEN PURP 75V 300MA D5B	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTX1N6641US	Microsemi Corporation	DIODE GEN PURP 50V 300MA B-MELF	Active	Standard	50V	300mA (DC)	1.1V @ 300mA	Fast Recovery =< 500ns, > 200mA (Io)	5ns	100µA @ 50V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5615US	Microsemi Corporation	DIODE GEN PURP 200V 1A D-5A	Active	Standard	200V	1A	800mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500µA @ 200V	-	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 200°C
JANTX1N6620	Microsemi Corporation	DIODE GEN PURP 220V 2A AXIAL	Active	Standard	220V	2A	1.4V @ 1.2A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	500nA @ 220V	10pF @ 10V, 1MHz	Through Hole	A, Axial	Axial	-65°C ~ 150°C
JANTXV1N6643U	Microsemi Corporation	DIODE GEN PURP 75V 300MA D-MELF	Active	Standard	75V	300mA	1.2V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	20ns	500nA @ 75V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
1N6642UBCA	Microsemi Corporation	DIODE GEN PURPOSE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6642UBCC	Microsemi Corporation	DIODE GEN PURPOSE	Active	-	-	-	-	-	-	-	-	-	-	-	-
MSC030SDA120S	Microsemi Corporation	UNRLS FG GEN2 SIC SBD TO-268	Active	Silicon Carbide Schottky	1200V	30A (DC)	-	No Recovery Time > 500mA (Io)	0ns	-	-	Surface Mount	TO-268-3, D³Pak (2 Leads + Tab), TO-268AA	D3Pak	-
JANTXV1N5806	Microsemi Corporation	DIODE GEN PURP 150V 1A AXIAL	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
JANTX1N5188	Microsemi Corporation	DIODE GEN PURP 400V 3A AXIAL	Active	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	2µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
JAN1N5190	Microsemi Corporation	DIODE GEN PURP 600V 3A AXIAL	Active	Standard	600V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	2µA @ 600V	-	Through Hole	B, Axial	Axial	-65°C ~ 175°C
1N6537	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTX1N5617US	Microsemi Corporation	DIODE GEN PURP 400V 1A D5A	Active	Standard	400V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	500µA @ 400V	35pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JAN1N5551US	Microsemi Corporation	DIODE GEN PURP 400V 3A B-MELF	Active	Standard	400V	3A	1.2V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 400V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JAN1N5553US	Microsemi Corporation	DIODE GEN PURP 800V 3A B-MELF	Active	Standard	800V	3A	1.3V @ 9A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 800V	-	Surface Mount	SQ-MELF, B	D-5B	-65°C ~ 175°C
JANTX1N5623US	Microsemi Corporation	DIODE GEN PURP 1KV 1A D5A	Active	Standard	1000V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	500nA @ 1000V	15pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
JANTXV1N6639US	Microsemi Corporation	SWITCHING DIODE	Active	-	-	-	-	-	-	-	-	-	-	-	-
1N6538	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N5618	Microsemi Corporation	DIODE GEN PURP 600V 1A AXIAL	Active	Standard	600V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	2µs	500nA @ 600V	-	Through Hole	A, Axial	-	-65°C ~ 200°C
JAN1N5711UR-1	Microsemi Corporation	DIODE SCHOTTKY 70V 33MA DO213AA	Active	Schottky	70V	33mA	1V @ 15mA	Small Signal =< 200mA (Io), Any Speed	-	200nA @ 50V	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 150°C
1N5621US	Microsemi Corporation	DIODE GEN PURP 800V 1A D5A	Active	Standard	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	20pF @ 12V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
1N6548	Microsemi Corporation	DIODE RECT ULT FAST REC A-PKG	Active	-	-	-	-	-	-	-	-	-	-	-	-
JANTXV1N5806US	Microsemi Corporation	DIODE GEN PURP 150V 1A D5A	Active	Standard	150V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 150V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C

Hersteller für Dioden - Gleichrichter - Einzeln